Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Gusakov, V. E."'
Autor:
Saiko, A. P., Gusakov, V. E.
Publikováno v:
J. Exp. Theor. Phys. 89, 92 (1999). [Zh. Eksp. Teor. Fiz. 116, 168 (1999)]
It is shown that in crystal lattices with a basis the cooperative behavior of a certain type of atoms performing optical long-wavelength vibrations in a double-well potential of the field of the matrix lattice may lead to the formation of a bistable
Externí odkaz:
http://arxiv.org/abs/2011.01594
Дефектно-примесная инженерия. Радиационные эффекты в полупроводниках The study of formation and diffusion of point defects in bulk and monolayer MoS2 is presented. First the formation of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::398115e04782bab8bd669e3a967c0aec
http://elib.bsu.by/handle/123456789/215215
http://elib.bsu.by/handle/123456789/215215
Autor:
Lastovskii, S.B., Gusakov, V. E., Markevich, Vladimir, Peaker, Anthony, Yakushevich, H.S., Korshunov, F. P., Murin, L. I.
Publikováno v:
Lastovskii, S B, Gusakov, V E, Markevich, V, Peaker, A, Yakushevich, H S, Korshunov, F P & Murin, L I 2017, ' Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700262
We present experimental and theoretical results showing that the migration of interstitial carbon atom (Ci) in silicon depends on its charge state. The experimental results were obtained from the analysis of changes in concentrations of the Ci defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3818::1345acaae1ceb1004d1d7ed3187fa9bc
https://www.research.manchester.ac.uk/portal/en/publications/radiationinduced-interstitial-carbon-atom-in-silicon-effect-of-charge-state-on-annealing-characteristics(32344d89-42e9-4bbf-a289-aa9d6909648b).html
https://www.research.manchester.ac.uk/portal/en/publications/radiationinduced-interstitial-carbon-atom-in-silicon-effect-of-charge-state-on-annealing-characteristics(32344d89-42e9-4bbf-a289-aa9d6909648b).html
Autor:
Gusakov, V. E., Lastovskii, S.B., Murin, L. I., Tolkacheva, E.A., Khirunenko, L. I., Sosnin, M. G., Duvanskii, A.V., Markevich, Vladimir, Halsall, Matthew, Peaker, Anthony, Kolevatov, I, Ayedh, H.M., Monakhov, E. V., Svensson, B. G.
Publikováno v:
Gusakov, V E, Lastovskii, S B, Murin, L I, Tolkacheva, E A, Khirunenko, L I, Sosnin, M G, Duvanskii, A V, Markevich, V, Halsall, M, Peaker, A, Kolevatov, I, Ayedh, H M, Monakhov, E V & Svensson, B G 2017, ' The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700261
New experimental and theoretical results on the silicon di-interstitial (I2) and itsinteractions with oxygen and carbon impurity atoms in Si crystals are reported. The electronic structure calculations indicate that I2 has an acceptor and a donor lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3818::803f6a5025ed35f28cd61dd9115582e0
https://www.research.manchester.ac.uk/portal/en/publications/the-diinterstitial-in-silicon-electronic-properties-and-interactions-with-oxygen-and-carbon-impurity-atoms(bf32c5b3-6d4a-4f49-84bc-f7d680c4c96f).html
https://www.research.manchester.ac.uk/portal/en/publications/the-diinterstitial-in-silicon-electronic-properties-and-interactions-with-oxygen-and-carbon-impurity-atoms(bf32c5b3-6d4a-4f49-84bc-f7d680c4c96f).html
The experimental and theoretical data on the structure, electronic and dynamic properties of the I2O complex are presented. Belarusian Republican Foundation for Fundamental Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::90cfca476a79ce7cd934edcfcb21dbf9
http://elib.bsu.by/handle/123456789/164183
http://elib.bsu.by/handle/123456789/164183
Autor:
Saıko, A. P., Gusakov, V. E.
Publikováno v:
Journal of Experimental & Theoretical Physics. Jul99, Vol. 89 Issue 1, p92. 15p.
Akademický článek
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Autor:
Gusakov, V. E.
Publikováno v:
AIP Conference Proceedings; Sep1999, Vol. 483 Issue 1, p49-52, 4p
Autor:
Gusakov, V. E.
Publikováno v:
Journal of Low Temperature Physics; November 1996, Vol. 105 Issue: 3-4 p359-364, 6p
Autor:
Saiˇko, A. P., Gusakov, V. E.
Publikováno v:
Low Temperature Physics; 1996, Vol. 22 Issue 7, p575-577, 3p