Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gururaj Hosamani"'
Autor:
Gururaj Hosamani, B. N. Jagadale, Jayappa Manjanna, J. S. Bhat, S. M. Shivaprasad, D. K. Shukla
Publikováno v:
Journal of Electronic Materials. 50:52-58
(In1−xDyx)2O3 (x = 0, 0.05, 0.10) nanoparticles with a particle size of 15–22 nm were obtained by an auto-combustion method. The powder x-ray diffraction (XRD), Raman and x-ray absorption near edge spectral (XANES) analysis revealed a cubic bixby
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7871-7879
For spintronic devices, the room temperature ferromagnetism in dilute semiconductors is essential. We report here the successful preparation of (In1−xGdx)2O3 [x = 0, 0.05, 0.10] by auto-combustion method. The powder XRD and SAED data confirmed the
Autor:
Korakod Tongkachok, Luigi Pio Leonardo Cavaliere, Sudakshina C, Gururaj Hosamani, Dhiraj Kapila, Samrat Ray
Publikováno v:
2021 International Conference on Computing Sciences (ICCS).
Autor:
C. C. Vidyasagar, Gururaj Hosamani, Veena Mathapati, Prakash Kariyajjanavar, Megha Madiwalar, Keerti M. Khilari, Priya Nikkam
Publikováno v:
Asian Journal of Materials Chemistry. :34-42
Nowadays incorporation of few oxygen groups between the layers of graphite have shown potential approach for industrialization of graphene oxide for different potential applications. During the strong oxidation process in modified Hummers method, the
Publikováno v:
Materials Today: Proceedings. 4:12075-12079
The effect of fuel (Glycine, G) to oxidant (metal Nitrates, N) ratio on the formation of nano-sized powders by the self-propagating auto-combustion technique is reported. Nano-crystalline single phase In 2 O 3 was synthesized at different G/N mole ra
Publikováno v:
Nanotechnology. 29(50)
This work proposes p-TiO
Autor:
H.B. Muralidhara, C. C. Vidyasagar, Yanjerappa Arthoba Naik, Murugaiya Sridar Ilango, Gururaj Hosamani
Publikováno v:
Energy and Environment Focus. 4:54-63
Publikováno v:
Nanotechnology. 29:50LT02
This work proposes p-TiO2/n-GaN as a new semiconductor heterostructure, which holds great promise as a photoelectrode material. To fabricate p-TiO2/n-GaN heterostructures, wurtzite GaN is grown in two different morphologies by molecular beam epitaxy,
Publikováno v:
Nanotechnology; 12/14/2018, Vol. 29 Issue 50, p1-1, 1p