Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gurur Salkim"'
Autor:
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://doaj.org/article/5f220c2dc96e4d1191d32b2a27c4b853
Autor:
Oguz Odabasi, Amir Ghobadi, Turkan Gamze Ulusoy Ghobadi, Yakup Unal, Gurur Salkim, Gunes Basar, Bayram Butun, Ekmel Ozbay
Publikováno v:
IEEE Electron Device Letters
In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01abf7e6547abebe19af82a6d3b43273
https://doi.org/10.1109/led.2022.3199569
https://doi.org/10.1109/led.2022.3199569
Publikováno v:
Engineering Research Express
The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04808598b5f90a098651ebf7c4816135
https://doi.org/10.1088/2631-8695/aca95f
https://doi.org/10.1088/2631-8695/aca95f
Autor:
Gokhan Kurt, Ekmel Ozbay, Turkan Gamze Ulusoy Ghobadi, Mustafa Kemal Öztürk, Gurur Salkim, Bayram Butun, Melisa Ekin Gulseren, Amir Ghobadi
Publikováno v:
Materials Research Express
In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in the gate lag performance of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e9d08cd0821ca3d8ad62ad327290aba
https://aperta.ulakbim.gov.tr/record/74693
https://aperta.ulakbim.gov.tr/record/74693
Autor:
Mustafa Kemal Öztürk, Bayram Butun, Gokhan Kurt, Mehmet Kabak, Sertaç Ural, Ömer Ahmet Kayal, Melisa Ekin Gulseren, Gurur Salkim, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c2a57be25dd96f862b1632d63e6b6a2
https://aperta.ulakbim.gov.tr/record/72091
https://aperta.ulakbim.gov.tr/record/72091
Autor:
Melisa Ekin Gulseren, Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Amir Ghobadi, Gurur Salkim, Mustafa Ozturk, Bayram Butun, Ekmel Ozbay
Publikováno v:
Materials Research Express; Sep2019, Vol. 6 Issue 9, p1-1, 1p