Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Guru Mathur"'
Autor:
Clint Naquin, Yongda Cai, Gangyi Hu, Mark Lee, Yun Chiu, Hal Edwards, Guru Mathur, Tathagata Chatterjee, Ken Maggio
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 224-231 (2017)
This paper reports on the use of a single quantum well (QW) silicon NMOS transistor to generate a folded current-voltage transfer function that enables frequency doubling and tripling. The QW NMOS device is fabricated entirely on an industrially stan
Externí odkaz:
https://doaj.org/article/c2cfd06bbd71442086ace04c3dcf19ee
Publikováno v:
IEEE Transactions on Electron Devices. 68:713-719
We investigated the effect of channel hot carrier (CHC) stressing on the creation of gate oxide defect centers causing random telegraph signals (RTSs) in pMOSFETs. To identify these stress-induced hole traps in the oxide and fully characterize their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f7790a9ac620f257c46619f4088b30
https://doi.org/10.1109/ted.2020.3044016
https://doi.org/10.1109/ted.2020.3044016
Publikováno v:
IEEE Transactions on Electron Devices. 65:4527-4534
We report on the investigation of random telegraph signals (RTSs) in pMOSFETs at variable temperatures to identify and characterize the hole traps residing at the oxide–semiconductor interface. Attractive center defects as well as a repulsive cente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc4061da7a28f441b9276d501998aef
https://doi.org/10.1109/ted.2018.2866229
https://doi.org/10.1109/ted.2018.2866229
Autor:
Mark Lee, Yongda Cai, Yun Chiu, Clint Naquin, Guru Mathur, Tathagata Chatterjee, Ken Maggio, Gangyi Hu, Hal Edwards
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 224-231 (2017)
This paper reports on the use of a single quantum well (QW) silicon NMOS transistor to generate a folded current–voltage transfer function that enables frequency doubling and tripling. The QW NMOS device is fabricated entirely on an industrially st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d460f75f766008be5c44b87afa63d1d5
https://ieeexplore.ieee.org/document/7852491/
https://ieeexplore.ieee.org/document/7852491/
Publikováno v:
IEEE Transactions on Electron Devices. 63:1428-1436
Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation and modeling tools in highly scaled devices. In this paper, we are presenting a comprehensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a006ec6b7afda67f27a89ff24bb79364
https://doi.org/10.1109/ted.2016.2528218
https://doi.org/10.1109/ted.2016.2528218
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
This paper presents an ESD self-protection scheme for a 700V high-voltage laterally diffused metal-oxide-semiconductor (LDMOS) field effect transistor. The safe operating area (SOA) and breakdown failure mechanism of 700V LDMOS are analyzed using sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da29717bd9fb325a3a6edaf722cdfd0
https://doi.org/10.1109/eosesd.2015.7314735
https://doi.org/10.1109/eosesd.2015.7314735
Autor:
A. M. Sonnet, Mohamed Nour, Zeynep Celik-Butler, Guru Mathur, F. Hou, A. S. M. S. Rouf, S. Tang
Publikováno v:
2015 International Conference on Noise and Fluctuations (ICNF).
This paper presents a new statistical RTS model and a simulation tool to predict and replicate the RTS in time and frequency domains. This new developed RTS model and its simulation tool are constructed based on first-principles, taking into account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9953fdd6a6fda0febc92cba91f325be2
https://doi.org/10.1109/icnf.2015.7288605
https://doi.org/10.1109/icnf.2015.7288605
Publikováno v:
IEEE Transactions On Nanotechnology. 5:258-264
Redox-active molecular monolayers were incorporated in silicon MOSFETs to obtain hybrid silicon/molecular FETs. Cyclic voltammetry and FET characterization techniques were used to study the properties of these hybrid devices. The redox-active molecul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5e099f262d9e229c1821cd1fc33d71
https://doi.org/10.1109/tnano.2006.874046
https://doi.org/10.1109/tnano.2006.874046
Publikováno v:
IEEE Transactions On Nanotechnology. 4:278-283
Self-assembled monolayers of redox-active molecules were formed on varying thickness of silicon dioxide (SiO/sub 2/). Cyclic voltammetry (CyV) and impedance spectroscopy (capacitance-voltage and conductance-voltage) techniques were used to characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1223a28891cad0d4c0a766f4021bcf4
https://doi.org/10.1109/tnano.2004.842056
https://doi.org/10.1109/tnano.2004.842056
Autor:
Qian Zhao, P R Larson, Shyam Surthi, Srivardhan Gowda, Veena Misra, Qiliang Li, Yong Luo, Guru Mathur, M B Johnson
Publikováno v:
Nanotechnology. 16:257-261
Uniform arrays of nano-scale electrolyte-molecule-silicon capacitors have been successfully fabricated. This was done by a combination of reactive ion etch and a selective wet etch through an anodic aluminium oxide mask to form nano-holes in silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81ad69b9cb18014f374da12f51f294fb
https://doi.org/10.1088/0957-4484/16/2/013
https://doi.org/10.1088/0957-4484/16/2/013