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Autor:
Himmerlich, Anja, Castelló-Mor, N., Gurimskaya, Yara, Currás, Esteban, Maulerova Subert, Vendula, Moll, Michael, Pintilie, Ioana, Liao, Chuan, Fretwurst, Eckhart, Schwandt, Joern
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Trabajo presentado al 40th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, celebrado del 21 al 24 de junio de 2022 en el CERN (Zurich).
Boron-doped silicon devices used in high radiation environment like
Boron-doped silicon devices used in high radiation environment like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4257981115a67b0847b40f41b9358910
http://hdl.handle.net/10261/280068
http://hdl.handle.net/10261/280068
