Zobrazeno 1 - 10
of 316
pro vyhledávání: '"Gupta Chirag"'
Publikováno v:
Romanian Journal of Internal Medicine, Vol 60, Iss 2, Pp 123-126 (2022)
Introduction: Autoimmune polyglandular syndrome (APS) is a condition having multiple endocrine abnormalities. It is divided into three types depending on the involvement of various endocrinopathies. It is also associated with other systemic involveme
Externí odkaz:
https://doaj.org/article/0ae18e1c061b40b18c864db6f0449ba0
Autor:
Alam, Md Tahmidul, Chen, Jiahao, Stephenson, Kenneth, Mamun, Md Abdullah-Al, Mazumder, Abdullah Al Mamun, Pasayat, Shubhra S., Khan, Asif, Gupta, Chirag
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before passivation
Externí odkaz:
http://arxiv.org/abs/2407.10354
Autor:
Mukhopadhyay, Swarnav, Seshadri, Parthasarathy, Haque, Mobinul, Xie, Shuwen, Bai, Ruixin, Sanyal, Surjava, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S.
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization of the deposition conditions such as temperature, V/III ratio, deposi
Externí odkaz:
http://arxiv.org/abs/2407.10342
Autor:
Gong, Jiarui, Zhou, Jie, Dheenan, Ashok, Sheikhi, Moheb, Alema, Fikadu, Ng, Tien Khee, Pasayat, Shubhra S., Gan, Qiaoqiang, Osinsky, Andrei, Gambin, Vincent, Gupta, Chirag, Rajan, Siddharth, Ooi, Boon S., Ma, Zhenqiang
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the develo
Externí odkaz:
http://arxiv.org/abs/2312.00771
Publikováno v:
ICDCSW 2023
Compressed data aggregation (CDA) over wireless sensor networks (WSNs) is task-specific and subject to environmental changes. However, the existing compressed data aggregation (CDA) frameworks (e.g., compressed sensing-based data aggregation, deep le
Externí odkaz:
http://arxiv.org/abs/2308.05757
Autor:
Gong, Jiarui, Kim, Donghyeok, Jang, Hokyung, Alema, Fikadu, Wang, Qingxiao, Ng, Tien Khee, Qiu, Shuoyang, Zhou, Jie, Su, Xin, Lin, Qinchen, Singh, Ranveer, Abbasi, Haris, Chabak, Kelson, Jessen, Gregg, Cheung, Clincy, Gambin, Vincent, Pasayat, Shubhra S., Osinsky, Andrei, Boon, Ooi, S., Gupta, Chirag, Ma, Zhenqiang
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered th
Externí odkaz:
http://arxiv.org/abs/2305.19138
In a sequential regression setting, a decision-maker may be primarily concerned with whether the future observation will increase or decrease compared to the current one, rather than the actual value of the future observation. In this context, we int
Externí odkaz:
http://arxiv.org/abs/2305.18655
Autor:
Gupta, Chirag, Ramdas, Aaditya
We present an online post-hoc calibration method, called Online Platt Scaling (OPS), which combines the Platt scaling technique with online logistic regression. We demonstrate that OPS smoothly adapts between i.i.d. and non-i.i.d. settings with distr
Externí odkaz:
http://arxiv.org/abs/2305.00070
Autor:
Mukhopadhyay, Swarnav, Liu, Cheng, Chen, Jiahao, Sanyal, Surjava, Bai, Ruixin, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra
Publikováno v:
Crystals 2023, 13(10), 1456
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 \Omega / \Box ) is reported. Optimization of growth conditions, such as reduced growth r
Externí odkaz:
http://arxiv.org/abs/2304.05593
Autor:
Alam, Md Tahmidul, Gupta, Chirag
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V and 915V r
Externí odkaz:
http://arxiv.org/abs/2304.04648