Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Gupta, Sumeet K."'
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for deep neural networks to attain high energy efficiency and integration density. Towards that end, various CMOS and post-CMOS technologies have been explored as promising syn
Externí odkaz:
http://arxiv.org/abs/2307.04261
In ferroelectric (FE) materials, characteristics of a domain wall (DW), such as charge neutrality, width, polarization, speed, favorability, etc. strongly depend on the orientation of the domains. As an emerging FE material, Hafnium Zirconium Oxide (
Externí odkaz:
http://arxiv.org/abs/2305.12350
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain ef
Externí odkaz:
http://arxiv.org/abs/2303.15625
To understand and harness the physical mechanisms of ferroelectric Hafnium Zirconium Oxide (HZO)-based devices, there is a need for clear understanding of domain interactions, their dynamics, negative capacitance effects, and other multi-domain chara
Externí odkaz:
http://arxiv.org/abs/2208.11029
Autor:
Thakuria, Niharika, Elangovan, Reena, Thirumala, Sandeep K, Raghunathan, Anand, Gupta, Sumeet K.
We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile memory for ternary deep neural networks (DNNs). PeFETs consist of a material with ferroelectric and piezoelectric properties coupled with Transition Metal Dichalcogenide chann
Externí odkaz:
http://arxiv.org/abs/2203.16416
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The proposed NVMs sto
Externí odkaz:
http://arxiv.org/abs/2203.00064
Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands are based on multi-wordline assertion for computing bit-wise Boolean functions and arithmet
Externí odkaz:
http://arxiv.org/abs/2201.01509
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant polarizatio
Externí odkaz:
http://arxiv.org/abs/2105.04647
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D $\alpha$-In$_2$Se$_3$ based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the semiconducting
Externí odkaz:
http://arxiv.org/abs/2007.02752
Autor:
Saha, Atanu K, Gupta, Sumeet K
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks. Our analysis is based on 2D phase field simulations. Cons
Externí odkaz:
http://arxiv.org/abs/1912.00104