Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes.

Autor: Laurent, Matthew A., Gupta, Geetak, Suntrup III, Donald J., DenBaars, Steven P., Mishra, Umesh K.

Publikováno v: Journal of Applied Physics; 2/14/2016, Vol. 119 Issue 6, p1-7, 7p, 1 Color Photograph, 2 Charts, 4 Graphs

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates.

Autor: Kolluri, Seshadri, Keller, Stacia, Brown, David, Gupta, Geetak, Mishra, Umesh K., Denbaars, Steven P., Rajan, Siddharth

Publikováno v: Journal of Applied Physics; Oct2010, Vol. 108 Issue 7, p074502, 4p, 1 Diagram, 6 Graphs

Design of III-Nitride Hot Electron Transistors

Autor: Gupta, Geetak

Publikováno v: Gupta, Geetak. (2015). Design of III-Nitride Hot Electron Transistors. 0035: Electrical & Computer Engineering. Retrieved from: http://www.escholarship.org/uc/item/8nc0d155

III-Nitride based devices have made great progress over the past few decades in electronics and photonics applications. As the technology and theoretical understanding of the III-N system matures, the limitations on further development are based on v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::ac67e7602303f9fb96dcb847509f2ac4
http://www.escholarship.org/uc/item/8nc0d155

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