Zobrazeno 1 - 10
of 150
pro vyhledávání: '"Guozhong Xing"'
Autor:
Long Liu, Di Wang, Dandan Wang, Yan Sun, Huai Lin, Xiliang Gong, Yifan Zhang, Ruifeng Tang, Zhihong Mai, Zhipeng Hou, Yumeng Yang, Peng Li, Lan Wang, Qing Luo, Ling Li, Guozhong Xing, Ming Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and acti
Externí odkaz:
https://doaj.org/article/52c5fad8428e4fc68256c5a9040f9ad4
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract After decades of efforts, some fundamental physics for electrical switching of magnetization is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii-Moriya interaction (DMI) effect, which is the chiral cou
Externí odkaz:
https://doaj.org/article/59ecf1d2d3e34150914ac5f64fc60e00
Autor:
Jie Cao, Xusheng Liu, Jie Qiu, Zhifei Yue, Yang Li, Qian Xu, Yan Chen, Jiewen Chen, Hongfei Cheng, Guozhong Xing, Enming Song, Ming Wang, Qi Liu, Ming Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Stretchable electronics that prevalently adopt chemically inert metals as sensing layers and interconnect wires have enabled high-fidelity signal acquisition for on-skin applications. However, the weak interfacial interaction between inert m
Externí odkaz:
https://doaj.org/article/2e765ace6144476fb4f64053ab39af61
Autor:
Di Wang, Ruifeng Tang, Huai Lin, Long Liu, Nuo Xu, Yan Sun, Xuefeng Zhao, Ziwei Wang, Dandan Wang, Zhihong Mai, Yongjian Zhou, Nan Gao, Cheng Song, Lijun Zhu, Tom Wu, Ming Liu, Guozhong Xing
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-12 (2023)
Designing bio-inspired artificial neurons within a single device is challenging. Here, the authors demonstrate a spintronic neuron with leaky-integrate-fire and self-reset characteristics and corroborate a new trajectory of all-spin neuromorphic comp
Externí odkaz:
https://doaj.org/article/80df9b00f9bc400d9838185a7c7c6e3f
Autor:
Tingting Miao, Bin Cui, Cungang Huang, Di Wang, Long Liu, Weikang Liu, Yongzhe Li, Ruiyue Chu, Xue Ren, Liang Liu, Bin Cheng, Guangjun Zhou, Hongwei Qin, Guozhong Xing, Jifan Hu
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 3, Pp n/a-n/a (2023)
The construction of artificial synapse based on the electric field‐controlled ion migration has been developed to be a prospective approach to achieving intelligent devices with advantage of low‐energy consumption. However, it is still a very cha
Externí odkaz:
https://doaj.org/article/cc1160ebd134416e9892e1201a5f8be4
Autor:
Ying Yang, Wei Xu, Guangyuan Chen, Zhenhu Jin, Dandan Wang, Zhihong Mai, Guozhong Xing, Jiamin Chen
Publikováno v:
Micromachines, Vol 14, Iss 12, p 2159 (2023)
Compared with electroplating, liquid casting enables the rapid formation of a three-dimensional solenoid coil with a narrower line width and greater thickness, which proves advantageous in enhancing the comprehensive performance of the micro-electrom
Externí odkaz:
https://doaj.org/article/079f3ecaf810482ab20539d8223f7d06
Autor:
Long Liu, Di Wang, Huai Lin, Xuefeng Zhao, Ziwei Wang, Nuo Xu, Xi Luo, Nan Gao, Xiaoyong Xue, Cheng Pan, Changqing Xie, Guozhong Xing
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 7, Iss 4, Pp 100508- (2022)
We propose a novel cell structure of spin–orbit torque (SOT) magnetic random-access memory (MRAM), which consists of three transistors and two canted-type x SOT magnetic tunnel junctions (3T2M) with opposite canting angle (+φ/-φ) on a shared heav
Externí odkaz:
https://doaj.org/article/376e09b4dd664df2a7e54b03bec83302
Autor:
Di Wang, Ziwei Wang, Nuo Xu, Long Liu, Huai Lin, Xuefeng Zhao, Sheng Jiang, Weinan Lin, Nan Gao, Ming Liu, Guozhong Xing
Publikováno v:
Advanced Science, Vol 9, Iss 30, Pp n/a-n/a (2022)
Abstract Owing to programmable nonlinear dynamics, magnetic domain wall (DW)‐based devices can be configured to function as spintronic neurons, promising to execute sophisticated tasks as a human brain. Developing energy‐efficient, CMOS compatibl
Externí odkaz:
https://doaj.org/article/8a0e1b8b855b42deb87388106232d331
Autor:
Huai Lin, Nuo Xu, Di Wang, Long Liu, Xuefeng Zhao, Yongjian Zhou, Xuming Luo, Cheng Song, Guoqiang Yu, Guozhong Xing
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 9, Pp n/a-n/a (2022)
Emerging in‐memory computing (IMC) technology promises to tackle the memory wall bottleneck in modern systems. Promoted as a promising building block, nonvolatile spin–orbit torque (SOT) memory devices with sub‐ns and sub‐pJ processing capabi
Externí odkaz:
https://doaj.org/article/4aca5852c9bd4616b2ef7aaa11f12b8f
Autor:
Ruyi Chen, Qirui Cui, Liyang Liao, Yingmei Zhu, Ruiqi Zhang, Hua Bai, Yongjian Zhou, Guozhong Xing, Feng Pan, Hongxin Yang, Cheng Song
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Synthetic antiferromagnets (SAF), formed out of alternating layers of a ferromagnet with neutral spacer combine technologically appealing properties of both antiferromagnets and ferromagnets. Here, Chen et al demonstrate controlled switching of an SA
Externí odkaz:
https://doaj.org/article/ff83b1a5b6834a4eb379321dd25420ce