Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Guozhen Yue"'
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, we present the development of a new 14nm SiGe process that is designed to improve with-in-wafer uniformity to eventually improve Electrical parameters, parametric limited yield and overall average yield. In addition we showed that thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2aa13a40a0eb3efe3b5e8be0870349
https://doi.org/10.1109/asmc49169.2020.9185259
https://doi.org/10.1109/asmc49169.2020.9185259
Publikováno v:
Journal of Applied Physics; 10/1/2005, Vol. 98 Issue 7, p074902, 9p, 1 Diagram, 4 Charts, 5 Graphs
Publikováno v:
Solar Energy Materials and Solar Cells. 111:90-96
We present optical and electrical measurements of bandgap of hydrogenated nanocrystalline silicon (nc-Si:H). The absorption coefficient ( α ) does not yield a linear relation on the Tauc plot, indicating that the concept of the Tauc bandgap is no lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bdcb0853e53f38a1048f7c9bbabd6c
https://doi.org/10.1016/j.solmat.2012.12.038
https://doi.org/10.1016/j.solmat.2012.12.038
Publikováno v:
Solar Energy Materials and Solar Cells. 104:109-112
We found that for O content as high as ∼2×10 19 at./cm 3 , hydrogenated nanocrystalline silicon (nc-Si:H) solar cell having 10.6% efficiency is attainable, when a small amount of B ∼1–3×10 16 at./cm 3 is incorporated. Micro-doping compensatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::568c42584191ef0eefac2767404f8677
https://doi.org/10.1016/j.solmat.2012.05.005
https://doi.org/10.1016/j.solmat.2012.05.005
Publikováno v:
Solar Energy Materials and Solar Cells. 104:13-17
We studied the effect of Ag/ZnO back reflectors (BRs) with textured Ag and thin ZnO layers on hydrogenated nanocrystalline silicon (nc-Si:H) solar cell performance. We found that the photocurrent density increases with Ag texture when the surface roo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03edc5f11503288ca5b8f2b6dcdf4edb
https://doi.org/10.1016/j.solmat.2012.04.036
https://doi.org/10.1016/j.solmat.2012.04.036
Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells
Autor:
Jeff Yang, Guozhen Yue, Mowafak Al-Jassim, Laura Sivec, X. Tong, Chun-Sheng Jiang, Robert C. Reedy, Helio R. Moutinho, Subhendu Guha, Baojie Yan
Publikováno v:
MRS Proceedings. 1426:371-376
We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42741f8109bd5db03834c7fc2f2c4ab
https://doi.org/10.1557/opl.2012.1177
https://doi.org/10.1557/opl.2012.1177
Autor:
Tining Su, Guozhen Yue, Baojie Yan, Jessica Owens-Mawson, Laura Sivec, Subhendu Guha, Jeffrey Yang
Publikováno v:
MRS Proceedings. 1426:69-74
We report the results of using n-type hydrogenated nanocrystalline silicon oxide alloy (nc-SiOx:H) in hydrogenated nanocrystalline silicon (nc-Si:H) and amorphous silicon germanium alloy (a-SiGe:H) single-junction solar cells. We used VHF glow discha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a22bfdb50a297eddc6695e8ced343ebd
https://doi.org/10.1557/opl.2012.1015
https://doi.org/10.1557/opl.2012.1015
Autor:
Yang Li, Subhendu Guha, Jinyan Zhang, Tining Su, Peter G. Hugger, Jeff Yang, Xixiang Xu, Scott Ehlert, David Beglau, Ken Lord, Arindam Banerjee, J. David Cohen, Guozhen Yue, Baojie Yan, G. Pietka
Publikováno v:
physica status solidi c. 7:1077-1080
We have developed high efficiency large area a-Si:H and a-SiGe:H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We investigated a-SiGe:H deposition rate dependence of cell performance, and optimized MVH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94bb38f9a3dae0a01671f64e3798afaf
https://doi.org/10.1002/pssc.200982784
https://doi.org/10.1002/pssc.200982784
Publikováno v:
physica status solidi (a). 207:671-677
This paper reviews our progress of using nc-Si:H as a low bandgap absorber material to substitute for a-SiGe:H alloys in multi-junction solar cells. We have focused on three topics: (1) high deposition rate, (2) large area uniformity of thickness and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a99bf607cc80cdc5f9ca1fb627d764
https://doi.org/10.1002/pssa.200982886
https://doi.org/10.1002/pssa.200982886
Publikováno v:
Journal of Non-Crystalline Solids. 354:2440-2444
The effect of a-Si:H i/p buffer layer on the performance of nc-Si:H solar cells is studied systematically. The results show that for thin nc-Si:H cells, an optimized i/p buffer layer significantly reduces the dark current thus increases the open-circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6402d1fa1e68b1981e332f2ea60140e2
https://doi.org/10.1016/j.jnoncrysol.2007.09.037
https://doi.org/10.1016/j.jnoncrysol.2007.09.037