Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Guoyou Liu"'
Publikováno v:
IET Power Electronics, Vol 15, Iss 10, Pp 978-988 (2022)
Abstract With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved. This paper concentrates on the latest 3.3‐kV full SiC‐based me
Externí odkaz:
https://doaj.org/article/93df57ba8c0f4e3581cda37f4288ba85
Autor:
Xiang Li, Daohui Li, Guiqin Chang, Matthew Packwood, Daniel Pottage, Arthur Su, Yangang Wang, Haihui Luo, Guoyou Liu
Publikováno v:
IEEE Access, Vol 8, Pp 182600-182609 (2020)
The unique properties of a SiC hybrid 3.3-kV/450-A half-bridge IGBT power module which is designed for enhanced reliability of railcar converters are presented in this paper. The hybrid technique enabled by utilizing the state-of-the-art 3.3-kV SiC S
Externí odkaz:
https://doaj.org/article/882efc9d0bf248908dbeb20483428f85
Autor:
Xiang Li, Yangang Wang, Guiqin Chang, Xuejiao Huang, Wei Gong, Yiyi Chen, Zhongxu Wang, Matthew Packwood, Haihui Luo, Guoyou Liu
Publikováno v:
IEEE Transactions on Industrial Electronics. 70:2231-2240
Publikováno v:
IEEE Transactions on Power Electronics. 38:1747-1756
Publikováno v:
IEEE Transactions on Power Electronics. :1-13
Publikováno v:
IEEE Transactions on Electron Devices. 69:5689-5697
Publikováno v:
IEEE Transactions on Electron Devices. 69:4444-4452
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:3055-3065
In pursuit of high power density and high reliability of power converters, the junction temperature of power devices becomes an essential indicator for heath condition monitoring and thermal management. Particularly under high-temperature operating c
Autor:
Guiqin Chang, Xiang Li, Daniel Pottage, Guoyou Liu, Haihui Luo, Matthew Packwood, Daohui Li, Wei Gong, Yangang Wang
Publikováno v:
IEEE Transactions on Industrial Electronics. 69:1266-1275
A type of 3.3-kV/450-A half-bridge insulated-gate bipolar transistor power module combining the silicon (Si) and silicon carbide (SiC) technologies has been developed and reported in this article, for the miniaturization of the Chinese high-speed rai
Publikováno v:
Construction and Building Materials. 391:131799