Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Guoxiang Ning"'
Autor:
Guoxiang. Ning
The birefrigence of real-life optical fibers causes pulse broadening in fiber-optic communication systems. This phenomenon is known as polarization mode dispersion (PMD). PMD has recently emerged as one of the critical concerns in achieving high-perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a31a9c42faebe4be95e6cdc19430e4d
https://doi.org/10.32657/10356/4975
https://doi.org/10.32657/10356/4975
Publikováno v:
Photomask Technology.
One of the major challenges for process control is wafer to wafer and lot to lot variation, for the 14nm technology node and beyond. Most of advanced process control (APC) is based on product groups, and different product groups exhibit different amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056861b639685b7a92c5eec3427c7e67
https://doi.org/10.1117/12.2280570
https://doi.org/10.1117/12.2280570
Autor:
William Wilkinson, Shaowen Gao, Jiechang Hou, Norman Chen, Hongxin Zhang, Liang Cao, Guoxiang Ning, Jie Zhang
Publikováno v:
Photomask Technology.
CDSEM metrology is a powerful tool to obtain silicon data. However, as our technology nodes advance shrink to 14nm and below, the CD measurement data from CDSEM can hardly provide sufficient information for OPC verification (OPCV) and the related sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0087809655083e6b7d57b612cf883cba
https://doi.org/10.1117/12.2280422
https://doi.org/10.1117/12.2280422
Publikováno v:
SPIE Proceedings.
The ever increasing pattern densities and design complexities make the tuning of optical proximity correction (OPC) recipes more challenging. There are various recipe tuning methods to meet the challenge, such as genetic algorithm (GA), simulated ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b18a0e5db84e6f28d5e200f498ee9
https://doi.org/10.1117/12.2241178
https://doi.org/10.1117/12.2241178
Publikováno v:
SPIE Proceedings.
One of the major challenges of optical proximity correction (OPC) models is to maximize the coverage of real design features using sampling pattern. Normally, OPC model building is based on 1-D and 2-D test patterns with systematically changing pitch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6c692c7dbe6679a3471c5bffdd6773
https://doi.org/10.1117/12.2240934
https://doi.org/10.1117/12.2240934
Publikováno v:
SPIE Proceedings.
Aerial image measurement is a key technique for model based optical proximity correction (OPC) verification. Actual aerial images obtained by AIMS (aerial image measurement system) or WLCD (wafer level critical dimension) can detect printed wafer wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d4c22b51fa961836e63c2db443fa7c
https://doi.org/10.1117/12.2197025
https://doi.org/10.1117/12.2197025
Autor:
Sandra Hecker, Christian Buergel, Florian Werle, Paul Ackmann, Nan Fu, Stefan Roling, Guoxiang Ning
Publikováno v:
SPIE Proceedings.
Implant layers must cover both logic and SRAM devices with good fidelity even if feature density and pitch differ very much. The coverage design rules of implant layers for SRAM and logic to active layer can vary. Lithography targeting could be probl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f467b853d18e6d48fc16871d9de2a5af
https://doi.org/10.1117/12.2197195
https://doi.org/10.1117/12.2197195
Autor:
Edita Tejnil, John L. Sturtevant, Fritz Gans, Paul Ackmann, Kent H. Nakagawa, Ana Armeanu, Michael Lam, Peter Buck, Guoxiang Ning, Christian Buergel, Kostas Adam, Franklin D. Kalk, Steffen Schulze, Michael Oliver, David Fryer, Chris Clifford
Publikováno v:
SPIE Proceedings.
This study quantifies the impact of systematic mask errors on OPC model accuracy and proposes a methodology to reconcile the largest errors via calibration to the mask error signature in wafer data. First, we examine through simulation, the impact of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2fc9508d6ac2ab1012c0674a5d33285
https://doi.org/10.1117/12.2066483
https://doi.org/10.1117/12.2066483
Autor:
Lloyd C. Litt, Martin Tschinkl, Thomas Thaler, Peter Philipp, Guoxiang Ning, Paul Ackmann, Kristian Schulz, Stefan Meusemann
Publikováno v:
SPIE Proceedings.
Reticle critical dimension uniformity (CDU) is one of the major sources of wafer CD variations which include both inter-field variations and intra-field variations. Generally, wafer critical dimension (CD) measurement sample size interfield is much l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9667e6611246e42218f966934c360e8
https://doi.org/10.1117/12.2066173
https://doi.org/10.1117/12.2066173
Autor:
Dongqing Zhang, Yee Mei Foong, Lloyd C. Litt, Jacky Cheng, Paul Ackmann, Guoxiang Ning, Sergey Kropinov
Publikováno v:
SPIE Proceedings.
A robust optical proximity correction (OPC) model must include process variation to be effective in volume manufacturing. Often, calibration of an OPC model is based on data from a single scanner. However, scanner and mask three dimension (3D) effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4d79ebf8413abab31ebbc5ff0e43ff
https://doi.org/10.1117/12.2044779
https://doi.org/10.1117/12.2044779