Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Guokun Ma"'
Autor:
Li Tao, Bowen Jiang, Sijie Ma, Yan Zhang, Yuanqiang Huang, Yueyi Pan, Weijun Kong, Jun Zhang, Guokun Ma, Houzhao Wan, Yong Ding, Paul J. Dyson, Mohammad Khaja Nazeeruddin, Hao Wang
Publikováno v:
SmartMat, Vol 5, Iss 3, Pp n/a-n/a (2024)
Abstract Hybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. Howeve
Externí odkaz:
https://doaj.org/article/1da9e7ff10ec43a38e399332990c3489
Autor:
Tiansheng Ge, Binglin Cheng, Xu Han, Yaxin Chen, Hanbin Wang, Jun Zhang, Lin Lv, Li Tao, Wenjing Dong, Houzhao Wan, Guokun Ma, Yiheng Rao, Hao Wang
Publikováno v:
IEEE Access, Vol 12, Pp 42761-42768 (2024)
In this paper, a new method is proposed and verified to eliminate the non-ideal resonance caused by DGS application in GCPW by adding via holes to reduce electromagnetic leakage. By adding a dense through-hole array around the dumbbell DGS can form a
Externí odkaz:
https://doaj.org/article/f2be616273194261ae60f705de83da02
Autor:
Ao Chen, Puyi Zhang, Yiwei Zheng, Xiaoxu Yuan, Guokun Ma, Yiheng Rao, Houzhao Wan, Nengfan Liu, Qin Chen, Daohong Yang, Hao Wang
Publikováno v:
Applied Physics Express, Vol 17, Iss 3, p 036505 (2024)
The linearity of conductance modulation of the artificial synapse severely restricts the recognition accuracy and the convergence rate in the learning of artificial neural networks. In this work, by alloy electrode engineering, a Ti–Ag device gaine
Externí odkaz:
https://doaj.org/article/773506f76e754764a6a54017d3a693a3
Publikováno v:
Nanomaterials, Vol 13, Iss 19, p 2720 (2023)
Recently, two-dimensional (2D) materials and their heterostructures have been recognized as the foundation for future brain-like neuromorphic computing devices. Two-dimensional materials possess unique characteristics such as near-atomic thickness, d
Externí odkaz:
https://doaj.org/article/ac18f954a3584653b344b06229b2bf97
Autor:
Dingjun Wu, Yongchang Xu, Hai Zhou, Xin Feng, Jianqiang Zhang, Xiyan Pan, Zheng Gao, Rui Wang, Guokun Ma, Li Tao, Hanbin Wang, Jinxia Duan, Houzhao Wan, Jun Zhang, Liangping Shen, Hao Wang, Tianyou Zhai
Publikováno v:
InfoMat, Vol 4, Iss 9, Pp n/a-n/a (2022)
Abstract Photodetectors (PDs) based on perovskite nanowires are among the most promising next‐generation photodetection technologies; however, their poor long‐term stability is the biggest challenge limiting their commercial application. Herein,
Externí odkaz:
https://doaj.org/article/24be4777193c4a4d957da19d657a195f
Autor:
Jia Yao, Houzhao Wan, Chi Chen, Jie Ji, Nengze Wang, Zhaohan Zheng, Jinxia Duan, Xunying Wang, Guokun Ma, Li Tao, Hanbin Wang, Jun Zhang, Hao Wang
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-14 (2021)
Abstract The alkaline zinc-based batteries with high energy density are becoming a research hotspot. However, the poor cycle stability and low-rate performance limit their wide application. Herein, ultra-thin CoNiO2 nanosheet with rich oxygen defects
Externí odkaz:
https://doaj.org/article/60a546e3cbfb42e0b7f59deddf26536e
Autor:
Junjie Zheng, Pengcheng Liu, Jia Yao, Yi Gan, Jingying Li, Cong Wang, Xiang Liu, Yiheng Rao, Guokun Ma, Lin Lv, Hanbin Wang, Li Tao, Jun Zhang, Hao Wang
Publikováno v:
Frontiers in Chemistry, Vol 10 (2022)
Aqueous rechargeable zinc-ion batteries (ZIBs) have been given more and more attention because of their high specific capacity, high safety, and low cost. The reasonable design of Mn-based cathode materials is an effective way to improve the performa
Externí odkaz:
https://doaj.org/article/742903e2fde94477bf441d92aeb12601
Autor:
Nengfan Liu, Gaoqi Yang, Yuli He, Guokun Ma, Ao Chen, Qin Chen, Zhiyuan Xiong, Chunlei Liu, Yi-Ting Tseng, Ting-Chang Chang, Hao Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 981-985 (2020)
The memristor, emulating biological synapse, is recognized as one key way to overcome the classic von Neumann bottleneck. In this work, by using active metal Cu as electrode, the device of Cu/GeTeOx/TiN exhibited typical resistive switching character
Externí odkaz:
https://doaj.org/article/35c6ec2f53294485afb1e027e823038e
Autor:
Chunlei Liu, Guokun Ma, Junpeng Zeng, Qiuyang Tan, Ziqi Zhang, Ao Chen, Nengfan Liu, Houzhao Wan, Baoyuan Wang, Li Tao, Yiheng Rao, Liangping Shen, Hanbin Wang, Jun Zhang, Hao Wang
Publikováno v:
Frontiers in Materials, Vol 8 (2021)
To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study
Externí odkaz:
https://doaj.org/article/1f92ebe7c0b64e73bd8c0a0c64f9f078
Autor:
Yuyang Fu, Jinyu Wen, Lun Wang, Ling Yang, Qihang Zhu, Wenbin Zuo, Puyi Zhang, Yi Li, Hao Tong, Guokun Ma, Hao Wang, Xiangshui Miao
Publikováno v:
IEEE Electron Device Letters. 44:853-856
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fee2771a49a83d069e9eb44cb29a4a
https://doi.org/10.1109/led.2023.3259000
https://doi.org/10.1109/led.2023.3259000