Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Guohao Yu"'
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045224-045224-9 (2024)
We have simulatively studied the electrical excitation of acoustic and optical plasmons in double-channel AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries. By solving the self-consistent hydrodynamic model with Maxwell
Externí odkaz:
https://doaj.org/article/124fde21bb4c458ea72028e592189839
Autor:
Ping Zhang, Yin Dong, Xubo Li, Xinxin Cao, Youfeng Yang, Guohao Yu, Shengpeng Yang, Shaomeng Wang, Yubin Gong
Publikováno v:
Micromachines, Vol 15, Iss 6, p 723 (2024)
Surface plasmon polaritons (SPPs) have become a research hotspot due to their high intensity and subwavelength localization. Through free-electron excitation, a portion of the momentum of moving electrons can be converted into SPPs. Converting highly
Externí odkaz:
https://doaj.org/article/cafec9a5162b4454a8f9b8e8cfe03cd6
Autor:
Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng, Baoshun Zhang
Publikováno v:
Crystals, Vol 14, Iss 3, p 253 (2024)
This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technolo
Externí odkaz:
https://doaj.org/article/fb64bbf0298a4e41a436f7b7124cc3df
Autor:
An Yang, Xing Wei, Wenchao Shen, Yu Hu, Tiwei Chen, Heng Wang, Jiaan Zhou, Runxian Xing, Xiaodong Zhang, Guohao Yu, Yaming Fan, Yong Cai, Zhongming Zeng, Baoshun Zhang
Publikováno v:
Crystals, Vol 13, Iss 4, p 620 (2023)
A high-performance temperature sensor based on a p-GaN/AlGaN/GaN hybrid anode diode (HPT-HAD) fabricated by hydrogen plasma treatment is demonstrated. The sensor exhibits accurate and stable temperature responses from 73 to 573 K. The forward anode v
Externí odkaz:
https://doaj.org/article/999c192057d146be94f45928d62fd370
Autor:
Yu Li, Guohao Yu, Heng Wang, Jiaan Zhou, Zheming Wang, Runxian Xing, Shaoqian Lu, An Yang, Bingliang Zhang, Yong Cai, Zhongming Zeng, Baoshun Zhang
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 011004 (2023)
The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated. Through the
Externí odkaz:
https://doaj.org/article/f0a77c561ce24be281e882fda4a12b9c
Autor:
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian
Publikováno v:
AIP Advances, Vol 10, Iss 10, Pp 105317-105317-6 (2020)
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve
Externí odkaz:
https://doaj.org/article/6fbb37fd419c4ba7b9c244002a7033de
Autor:
Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, Baoshun Zhang
Publikováno v:
AIP Advances, Vol 8, Iss 3, Pp 035213-035213-6 (2018)
In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc) was investigated and it shows that there are different optimal
Externí odkaz:
https://doaj.org/article/5f5e8d99eca24229a9cb8a11b8afa9d1
Autor:
Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125023-125023-7 (2017)
In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which
Externí odkaz:
https://doaj.org/article/4359047cb0e64571ba0de43cfe273c5f
Autor:
Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125018-125018-7 (2017)
In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growt
Externí odkaz:
https://doaj.org/article/7c2cc3d485994287b98d9b39e02a20ab
Autor:
Shuiming Li, Yu Zhou, Hongwei Gao, Shujun Dai, Guohao Yu, Qian Sun, Yong Cai, Baoshun Zhang, Sheng Liu, Hui Yang
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035308-035308-5 (2016)
Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3), Al-composition (x = 0 and 7%), and buffer thickness (from 1.6 to 3.1 μm). A q
Externí odkaz:
https://doaj.org/article/5e91856f51884e3e871dc7527d24b48e