Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Guoguo Yan"'
Publikováno v:
Crystals, Vol 12, Iss 6, p 788 (2022)
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root m
Externí odkaz:
https://doaj.org/article/f943daf21ee64a5e97236f30c14df59b
Autor:
Shangyu Yang, Siqi Zhao, Junhong Chen, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Yang Zhang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 612:127058
Autor:
Shangyu Yang, Siqi Zhao, Junhong Chen, Yunkai Li, Guoguo Yan, Min Guan, Yang Zhang, Guosheng Sun, Yiping Zeng, Xingfang Liu
Publikováno v:
Semiconductor Science and Technology. 38:055019
Electrochemical etching is a promising wet etching technology for preparing porous structures and the flat surface etching of 4H-SiC. In this study, the effects of current density and KOH concentration on the etching of 4H-SiC were investigated. We f
Autor:
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 604:127048
Autor:
Siqi Zhao, Junhong Chen, Shangyu Yang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 603:127008
Autor:
Fei Yang, Lixin Tian, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Wanshun Zhao, Lei Wang, Guosheng Sun, Junmin Wu, Feng Zhang, Yiping Zeng
Publikováno v:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Autor:
Siqi Zhao, Jiulong Wang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Semiconductor Science and Technology. 37:105009
Due to the special ‘step-controlled epitaxy’ mode of 4H-SiC, it is easy to generate step bunching on the surface. Although the flatness of epitaxial wafers has been greatly improved with the advancement of epitaxy technology, there are still loca
Publikováno v:
Heliyon, Vol 10, Iss 16, Pp e35792- (2024)
Dynamic ensemble selection has emerged as a promising approach for hyperspectral image classification. However, selecting relevant features and informative samples remains a pressing challenge. To address this issue, we introduce two novel dynamic re
Externí odkaz:
https://doaj.org/article/3afe0eb21da34d89a91514486f85e479
Publikováno v:
Microwave and Optical Technology Letters. 58:901-904
An ultra-broadband power amplifier (PA) with TGF2023-2-10 GaN HEMT operating in the frequency of 3–7 GHz is presented in this article. The GaN HEMT transistor is modeled and the frequency compensation and multi impedance matching approach with diff
Publikováno v:
IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing, Vol 16, Pp 7585-7599 (2023)
Graph embedding is an effective method that has shown superiority in dimensionality reduction (DR) for hyperspectral imagery (HSI) due to its ability to characterize the intrinsic geometric structure of the data. However, it may ignore some feature i
Externí odkaz:
https://doaj.org/article/413e29379dfd46cbb015c88305d7309a