Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Guoguo Yan"'
Publikováno v:
Crystals, Vol 12, Iss 6, p 788 (2022)
Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root m
Externí odkaz:
https://doaj.org/article/f943daf21ee64a5e97236f30c14df59b
Autor:
Shangyu Yang, Siqi Zhao, Junhong Chen, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Yang Zhang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 612:127058
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59b863dde93dd29ac1370db55285ec1c
https://doi.org/10.1016/j.jcrysgro.2022.127058
https://doi.org/10.1016/j.jcrysgro.2022.127058
Autor:
Shangyu Yang, Siqi Zhao, Junhong Chen, Yunkai Li, Guoguo Yan, Min Guan, Yang Zhang, Guosheng Sun, Yiping Zeng, Xingfang Liu
Publikováno v:
Semiconductor Science and Technology. 38:055019
Electrochemical etching is a promising wet etching technology for preparing porous structures and the flat surface etching of 4H-SiC. In this study, the effects of current density and KOH concentration on the etching of 4H-SiC were investigated. We f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa1ebbf2e26a6ca34add274325d04e1
https://doi.org/10.1088/1361-6641/acca41
https://doi.org/10.1088/1361-6641/acca41
Autor:
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 604:127048
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0386f9f5546d5d2ee51ffbf3276dc6
https://doi.org/10.1016/j.jcrysgro.2022.127048
https://doi.org/10.1016/j.jcrysgro.2022.127048
Autor:
Siqi Zhao, Junhong Chen, Shangyu Yang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 603:127008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905ce75d251a724b45d420cb03e3077c
https://doi.org/10.1016/j.jcrysgro.2022.127008
https://doi.org/10.1016/j.jcrysgro.2022.127008
Autor:
Fei Yang, Lixin Tian, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Wanshun Zhao, Lei Wang, Guosheng Sun, Junmin Wu, Feng Zhang, Yiping Zeng
Publikováno v:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61786ed598155b6669b7db4d664a5aa1
https://doi.org/10.1109/wipdaasia51810.2021.9656100
https://doi.org/10.1109/wipdaasia51810.2021.9656100
Autor:
Siqi Zhao, Jiulong Wang, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Publikováno v:
Semiconductor Science and Technology. 37:105009
Due to the special ‘step-controlled epitaxy’ mode of 4H-SiC, it is easy to generate step bunching on the surface. Although the flatness of epitaxial wafers has been greatly improved with the advancement of epitaxy technology, there are still loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a5de9248eb1eb6b0a31b909a1e85d2
https://doi.org/10.1088/1361-6641/ac8c65
https://doi.org/10.1088/1361-6641/ac8c65
Publikováno v:
Microwave and Optical Technology Letters. 58:901-904
An ultra-broadband power amplifier (PA) with TGF2023-2-10 GaN HEMT operating in the frequency of 3–7 GHz is presented in this article. The GaN HEMT transistor is modeled and the frequency compensation and multi impedance matching approach with diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ac7b5e91a3635cd7d56eb21c1216d3
https://doi.org/10.1002/mop.29699
https://doi.org/10.1002/mop.29699
Publikováno v:
2015 IEEE 16th International Conference on Communication Technology (ICCT).
The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff9a756a44269a7c1b153b40569c42b2
https://doi.org/10.1109/icct.2015.7399900
https://doi.org/10.1109/icct.2015.7399900
Publikováno v:
2015 IEEE 16th International Conference on Communication Technology (ICCT).
The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97b3c7e5b5913a31189109053cf1de3
https://doi.org/10.1109/icct.2015.7399895
https://doi.org/10.1109/icct.2015.7399895