Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Guobin Bai"'
Autor:
Longda Zhou, Qianqian Liu, Hong Yang, Zhigang Ji, Hao Xu, Guilei Wang, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 229-235 (2021)
In this article, we present an experimental study on the impact of post-metallization annealing conditions on the negative-bias temperature instability (NBTI) of Si p-channel fin field-effect transistors (p-FinFETs) with atomic layer deposition tungs
Externí odkaz:
https://doaj.org/article/c5b752e8b8c341c8ae304cdcd783f0ac
Autor:
Hua Shao, Panpan Lai, Junjie Li, Guobin Bai, Qi Yan, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ea9e0ece02443a292e3bd203908d41
https://doi.org/10.1117/12.2658152
https://doi.org/10.1117/12.2658152
Publikováno v:
Advances in Patterning Materials and Processes XXXIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cad54e7f55aa1534ed2462e09a54760c
https://doi.org/10.1117/12.2612445
https://doi.org/10.1117/12.2612445
Autor:
Yu, Pan, Kunpeng, Jia, Kailiang, Huang, Zhenhua, Wu, Guobin, Bai, Jiahan, Yu, Zhaohao, Zhang, Qingzhu, Zhang, Huaxiang, Yin
Publikováno v:
Nanotechnology. 30(9)
In this paper, a near-ideal subthreshold swing MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::40b14b62ca4e1f8116c2c7d498b174a8
https://pubmed.ncbi.nlm.nih.gov/30561381
https://pubmed.ncbi.nlm.nih.gov/30561381
Autor:
Kailiang Huang, Jiahan Yu, Zhenhua Wu, Kunpeng Jia, Guobin Bai, Qingzhu Zhang, Huaxiang Yin, Zhaohao Zhang, Yu Pan
Publikováno v:
Nanotechnology. 30:095202
In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f8f7eab8b2ee7dd38e53d3ecf1d4d99
https://doi.org/10.1088/1361-6528/aaf956
https://doi.org/10.1088/1361-6528/aaf956
Autor:
Yu Pan, Kunpeng Jia, Kailiang Huang, Zhenhua Wu, Guobin Bai, Jiahan Yu, Zhaohao Zhang, Qingzhu Zhang, Huaxiang Yin
Publikováno v:
Nanotechnology; 3/1/2019, Vol. 30 Issue 9, p1-1, 1p