Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Guo-Xiang Zhi"'
Autor:
Guo-Xiang Zhi, Chenchao Xu, Xueqin Zhao, Jinou Dong, Shengli Guo, Huiyuan Man, Cui Ding, Licheng Fu, Yilun Gu, Lingfeng Xie, Xun Pan, Chao Cao, Fanlong Ning
Publikováno v:
New Journal of Physics, Vol 26, Iss 3, p 033030 (2024)
We perform systematic first-principles calculations on the electronic structure of n -type magnetic semiconductor Ba(Zn $_{1-x}$ Co _x ) _2 As _2 with the facilitation of HSE06 hybrid functional. Supercells are used to consider the doping of Co atoms
Externí odkaz:
https://doaj.org/article/1fa31cceb510463db3894960f2bf4e5f
Nanoribbons of large-gap quantum spin Hall insulator: electronic structures and transport properties
Publikováno v:
New Journal of Physics, Vol 26, Iss 2, p 023059 (2024)
Two-dimensional Bi grown on semiconductor substrate, a large-gap quantum spin Hall insulator characterized by a ( p _x , p _y )-orbital hexagonal lattice, has been theoretically proposed and experimentally confirmed. Here, by combining tight-binding
Externí odkaz:
https://doaj.org/article/22bf1d5825f249dfaaa9b2b1611bc061
Autor:
Liang Li, Guo-Xiang Zhi, Qinqing Zhu, Chunxiang Wu, Zhihua Yang, Jianhua Du, Jinhu Yang, Bin Chen, Hangdong Wang, Chao Cao, Minghu Fang
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p L032004 (2022)
Owing to the specific topological states in nodal-line semimetals, novel topological superconductivity is expected to emerge in these systems. In this Letter, we demonstrate that La_{3}Pt_{3}Bi_{4} is a topologically nontrivial nodal-ring semimetal p
Externí odkaz:
https://doaj.org/article/e9b8665ba72c41f0b0d555299e84b511
Autor:
Ling, Zhang, Guo-Xiang, Zhi, Qingling, Meng, Wenzhen, Dou, Chenqiang, Hua, Lu, Sun, Miao, Zhou
Publikováno v:
The Journal of chemical physics. 157(19)
We uncover the structure, stability, and electronic properties of polaronic defects in monolayer (ML) CeO
Publikováno v:
Physical review letters. 124(16)
Using the density functional theory combined with dynamical mean-field theory, we have performed systematic study of the electronic structure and its band topology properties of Ce_{3}Pt_{3}Bi_{4} and Ce_{3}Pd_{3}Bi_{4}. At high temperatures (∼290
Publikováno v:
Physical Review Letters. 4/24/2020, Vol. 124 Issue 16, p1-1. 1p.
Autor:
Chenchao Xu1, Jia Chen2, Guo-Xiang Zhi1, Yuke Li2, Jianhui Dai2 daijh@hznu.edu.cn, Chao Cao2 ccao@hznu.edu.cn
Publikováno v:
Physical Review B. May2016, Vol. 93 Issue 19, p1-1. 1p.