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pro vyhledávání: '"Guo-Qiang P. Lo"'
Publikováno v:
ECS Transactions. 16:747-754
To reap the full benefits of superior transport and optical properties of germanium, a low-resistance metal-germanides contact that is compatible with existing Si CMOS process technology would be highly desirable. In this abstract, we report the deve
Autor:
N. Balasubramanian, S.C. Rustagi, Navab Singh, Kavitha Devi Buddharaju, Guo-Qiang P. Lo, Dim-Lee Kwong
Publikováno v:
ECS Transactions. 16:729-729
Though top-down approach, which leverages on conventional lithography, patterning for wire formation, has been considered as the closest to the manufacturing format, many technology issues or even barriers are still widely remained. These technology
Autor:
Guo-Qiang P. Lo
Publikováno v:
ECS Meeting Abstracts. :2455-2455
not Available.
Publikováno v:
ECS Meeting Abstracts. :2459-2459
not Available.