Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Guo-Bao Jiang"'
Autor:
Xin-Ping Qu, Guo-Bao Jiang, Felix Cardon, R. L. Van Meirhaeghe, Guo-Ping Ru, Jing Liu, Bing-Zong Li
Publikováno v:
Materials Characterization. 48:229-235
CoSi2 is a promising material for self-aligned silicide (salicide) applications in sub-0.25 μm complementary metal–oxide–semiconductor (CMOS) technology. In conventional salicide technology, silicides are formed by a solid-state reaction (SSR) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a82b6d372828b58f239a448235cd5373
https://doi.org/10.1016/s1044-5803(02)00252-8
https://doi.org/10.1016/s1044-5803(02)00252-8
Publikováno v:
Ferroelectrics. 260:3-8
ZrO2 thin film with suitable dielectric constant for MFIS FET's application was prepared by novel metal-organic-decomposition (MOD) method. The dielectric constants of the thin film laid between 10 and 30 and increased with the development of the cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c9e7a69b662ba81ab37378819d99ef
https://doi.org/10.1080/00150190108015985
https://doi.org/10.1080/00150190108015985
Publikováno v:
Ferroelectrics. 260:9-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b9598e9d543eb5e65db6952ec81aec
https://doi.org/10.1080/00150190108015986
https://doi.org/10.1080/00150190108015986
Publikováno v:
Applied Surface Science. 62:249-254
X-ray photoelectron spectroscopy (XPS) and Auger-electron spectroscopy (AES) measurements have been used to study the practical Pt/InP interface. Evidence for the formation of platinum phosphide by chemical reaction at this interface is obtained. A m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5595495cb34021b4cec1771881d186
https://doi.org/10.1016/0169-4332(92)90365-5
https://doi.org/10.1016/0169-4332(92)90365-5
Autor:
P. Liu, K. Daneshvar, W. N. Huang, G. Singco, Bing-Zhong Li, X. Lu, Guo‐Bao Jiang, R. G. Aitken, M. Puzerewski
Publikováno v:
Journal of Applied Physics. 70:5427-5432
The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co‐evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::090866c02d467cee6697e647b42c0418
https://doi.org/10.1063/1.350200
https://doi.org/10.1063/1.350200
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c69d17308d2a4501a1c6ff0b10684fd
https://doi.org/10.1109/icsict.1995.500239
https://doi.org/10.1109/icsict.1995.500239
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Co/Ti/Si ternary solid phase interaction is a new method of CoSi/sub 2//Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi/sub 2/ on Si substrate, self-aligned silicidation of source/dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0a774d13a15df163f31dc6e051fd0a
https://doi.org/10.1109/icsict.1995.499262
https://doi.org/10.1109/icsict.1995.499262
Autor:
Wei-Jun Wu, Wei-Feng Yu, Zhi-Guang Gu, Hua Fang, Kai Shao, Bing-Zong Li, Guo-Bao Jiang, Wei-Ning Huang
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi/sub 2/ with good thermal stability and smooth surface can be obtained after thermal annealing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42a6b102e5acf168043825cdbdb0decf
https://doi.org/10.1109/icsict.1995.499266
https://doi.org/10.1109/icsict.1995.499266
Publikováno v:
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ceb77d6f0e9e0fef71e839c0f669e49
https://doi.org/10.1109/tencon.1995.496425
https://doi.org/10.1109/tencon.1995.496425
Publikováno v:
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.
The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8743f16b9c557cd181f6dbf50ba136
https://doi.org/10.1109/tencon.1995.496393
https://doi.org/10.1109/tencon.1995.496393