Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Guo Sheng Sun"'
Autor:
Yi Cai, Wen-Bo Liu, Miao Zhou, Yu-Tong Jin, Guo-Sheng Sun, Long Zhao, Fang Han, Jin-Feng Qu, Xuan Shi, Ming-Wei Zhao
Publikováno v:
Frontiers in Endocrinology, Vol 13 (2022)
PurposeTo evaluate capillaries perfusion and retinal nerve fiber layer (RNFL) thickness diurnal changes of macular/optic disc regions among participants with or without obstructive sleep apnea-hypopnea (OSA) using spectral-domain optical coherence to
Externí odkaz:
https://doaj.org/article/a0498241bd6f4e24b5125ce9b08c99bd
Publikováno v:
Geological Journal.
Publikováno v:
Canadian Journal of Earth Sciences. 58:458-470
There continues to be debate regarding the timing of the collision between the Indian and Eurasian plates and the uplift of the Tibetan Plateau. This study presents zircon U–Pb geochronology, whole-rock geochemistry, and Lu–Hf isotopic data for t
Publikováno v:
International Ophthalmology. 40:3309-3321
To compare capillaries perfusion in macular areas at different layers and peripapillary region in radial peripapillary capillaries (RPC) between healthy subjects and subjects with obstructive sleep apnea–hypopnea (OSA) using spectral-domain optical
Autor:
Wan Shun Zhao, Guo Sheng Sun, Feng Zhang, Guo Guo Yan, Xingfang Liu, Lei Wang, Zhan Wei Shen, Ying Xin Cui, Jun Tao Li
Publikováno v:
Materials Science Forum. 954:31-34
Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology
Autor:
Ya Wei He, Wan Shun Zhao, Zheng Xin Wen, Guo Sheng Sun, Lei Wang, Feng Zhang, Min Guan, Yiping Zeng, Guo Guo Yan, Xingfang Liu, Zhan Wei Shen, Jun Chen
Publikováno v:
Materials Science Forum. 954:26-30
The resonant frequency and Q factor of the SiC microcantilever were theoretically analyzed and calculated based on the stereotyped basic theories of the cantilever beam, and the relationship between the vibration mode and structure geometries was als
Autor:
Yiping Zeng, Wanshun Zhao, Junxiu Chen, Guo Sheng Sun, Fangfang Zhang, Min-Xin Guan, Yan Guoguo, Shen Zhanwei, Youping He, Xingfang Liu, Lishuang Wang, Wen Zhengxin
Publikováno v:
Journal of Crystal Growth. 507:283-287
Although homoepitaxial growth of multiple 4H-SiC wafers in one run can be realized in commercial specialized chemical vapor deposition equipment, wafers must be loaded onto a rotatable large susceptor and overspread on it, which leads to the diameter
Autor:
Xiehe Liu, L. Wang, Jun Tao Li, Y.X. Cui, Wanshun Zhao, Guo Sheng Sun, Y.P. Zeng, Fuwang Zhang, Shen Zhanwei, Yan Guoguo
Publikováno v:
Journal of Crystal Growth. 507:175-179
In this paper, homoepitaxial growth was performed on on-axis, 4° and 8° off-axis 4H-SiC (0001) Si-face substrate by using our home-made vertical hot wall LPCVD reactor and SiH4 + C2H4 + H2 + HCl gas system. The influence mechanism of growth tempera
Autor:
Shen Zhanwei, Junxiu Chen, Wen Zhengxin, Xingguo Li, Z.G. Wang, Yan Guoguo, Guo Sheng Sun, Y.P. Zeng, Xiyan Zhang, L. Wang, Xiehe Liu, Fuwang Zhang, Wanshun Zhao
Publikováno v:
Journal of Crystal Growth. 505:1-4
In this paper, thick 4H-SiC epilayers of 147 μm demanded for ultra-high-voltage power devices has been obtained at a high growth rate of 85 µm/h under optimized growth conditions. We have attempted to improve the quality and reduce the surface defe
Publikováno v:
Arabian Journal of Geosciences. 13
The timings of subduction of the Palaeo-Pacific Plate beneath the North China Craton and of associated mineralisation remain unresolved. We studied a granodiorite porphyry in the Banmiaozi gold mining area, located along the northeastern margin of No