Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Guo, Huaixi"'
Publikováno v:
Wuhan University Journal of Natural Sciences. 10:525-528
Nanostructural zinc oxide films have been synthesized via vapor phase growth by heating pure zinc powder. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) results showed that four kinds of morphologies ZnO nanostructures namely n
Publikováno v:
Wuhan University Journal of Natural Sciences. 8:821-824
CN x /SiCN composite films were prepared on titanium (Ti) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction
Publikováno v:
Wuhan University Journal of Natural Sciences. 8:829-832
SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P-type Si (1 0 0) wafers using C2H4, SiH4 and N2 as raw materials, In order to get rid of the oxygen absorbed on the surface and improve the characteris
Publikováno v:
Wuhan University Journal of Natural Sciences. 4:171-174
Well adhered C3N4 films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) on industrial pure iron substrates using ternary Si−N−C films as buffer layer. XRD measurement showed that the C3N4 films belong to the α-C3N4 phase. Elec
Publikováno v:
Physical Review B. 56:4949-4954
${\mathrm{C}}_{3}{\mathrm{N}}_{4}$ films were prepared on Si(111) by rf plasma-enhanced chemical vapor deposition using ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}/\mathrm{T}\mathrm{i}\mathrm{N}$ and ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}/\mathrm{Z}\mathrm{r}\mat
Autor:
Peng Yougui, Fan Xiangjun, Liu Chang, Meng Xianquan, Ye Minghsen, Cai Fengxin, Peng Zhilin, Guo Huaixi, Jiang Changzhong
Publikováno v:
Surface and Coatings Technology. 70:33-36
This superconducting films of YBa2Cu3O7 have been deposited on SrTiO3 substrates using a home-made hollow cathode magnetron sputtering system. The samples were placed on a variable-temperature target stage of a 200 keV implanter and then bombarded by
Publikováno v:
Chinese Physics Letters. 19:416-418
CNx thin films were prepared using low pressure plasma enhanced chemical vapour deposition, and then bombarded by low-energy N2+. The compositions before and after N2+ bombardment were compared using x-ray photoelectron spectroscopy. The electron fie
Publikováno v:
Vacuum. 42:1076-1077
An ion beam sputtering and a magnetron sputtering technique was respectively employed to deposit Y 1 B 2 aCu 3 O 7 thin films. After deposition, the films were annealed by three-step rapid thermal annealing (RTA) in flowing oxygen. The zero resistanc
Publikováno v:
Acta Physica Sinica. 47:1047
Cubic C3N4 was synthesized on glass and silicon wafers by using low-pressure plasma enhanced chemical vapor deposition and silicon nitride interlayer technology.The crystalline structure was investigated by transmission electron microscopy (TEM),and
Publikováno v:
Acta Physica Sinica. 46:530
Nitride carbon thin films have been deposited by plasma-enhanced chemical vapor phase deposition. The results of transmission-electron diffraction indicated that films have polycrystal structures. Carbon and nitrogen atoms binding energies and the ni