Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Guo, Bingliang"'
Publikováno v:
In Materials Science in Semiconductor Processing January 2024 169
Autor:
Zhu, Xingyu, Wu, Jiejun, Cheng, Yutian, Dong, Boyu, Guo, Bingliang, Li, Mengda, Zhao, Qiyue, Zhang, Guoyi, Yu, Tongjun
Publikováno v:
In Journal of Crystal Growth 15 June 2020 540
Autor:
Feng, Qiong, Ai, Yujie, Liu, Zhe, Yu, Zhiguo, Yang, Kun, Dong, Boyu, Guo, Bingliang, Zhang, Yun
Publikováno v:
In Superlattices and Microstructures May 2020 141
Publikováno v:
In Engineering Failure Analysis January 2020 108
Akademický článek
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Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Wu Shubo, Ding Peijun, Chen Yujing, Li Xinying, Zhang Jiahao, Wu Xuewei, Zhang Lu, Zhao Chenguang, Guo Bingliang, Dong Boyu, Ma Yinggong, Yang Yilong, Xiaoping Shi, Hougong Wang, Liu Yujie
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
AlN Physical Vapor Deposition (PVD) system is successfully developed by Beijing NAURA Microelectronics Co., Ltd. for 2–6 inch wafers. PVD AlN buffer layer is inserted in GaN substrate in LED manufacturing process to effectively improve the performa
Autor:
Lv H; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Huang Y; China Electronics Standardization Institute, Beijing 100007, China., Ai Y; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China., Liu Z; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Lin D; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China., Cheng Z; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Jia L; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China., Guo B; NAURA Technology Group Co., Ltd., Beijing 100176, China., Dong B; NAURA Technology Group Co., Ltd., Beijing 100176, China., Zhang Y; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China.; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Publikováno v:
Micromachines [Micromachines (Basel)] 2021 Dec 28; Vol. 13 (1). Date of Electronic Publication: 2021 Dec 28.