Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Guntrade Roll"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:112-116
InGaAs nMOSFETs with Al2O3 and HfO2 as dielectric are analyzed. The devices with Al 2O3 show a slightly better subthreshold slope. Both high- $\kappa$ 's have an equal transconductance frequency dispersion $(g_{m}\mbox{-}f)$ . A reduction of $g_{m}\m
Autor:
Guntrade Roll, Thomas Mikolajick, Rolf Öttking, Florian Lazarevic, Philipp Plänitz, S. Kupke, R. Leitsmann, Ebrahim Nadimi, Stefan Slesazeck, Martin Trentzsch
Publikováno v:
physica status solidi (a). 212:547-553
An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO2 as the first structural step for the creation of new defects as we
Autor:
Stefan Slesazeck, S. Kupke, Thomas Mikolajick, Steve Knebel, Philipp Plänitz, Guntrade Roll, Martin Trentzsch, Rolf Öttking, C. Radehaus, Michael Schreiber, Rimoon Agaiby, Ebrahim Nadimi
Publikováno v:
IEEE Transactions on Electron Devices. 61:1278-1283
Theoretical and experimental methods are applied to investigate the degradation of SiO2/HfO2 gate-stacks in state-of-the-art MOSFETs. A combination of density functional theory and nonequilibrium Green's function formalism has been applied to the ato
Publikováno v:
Microelectronics Reliability. 51:2081-2085
A good control of the transient enhanced dopant diffusion is needed for MOSFET scaling down to the sub 50 nm regime. Carbon ion implant is known to significantly suppress the transient enhanced boron diffusion. However, carbon implantation is also re
A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::266cfc3689399cf9cb40ebd22f693f7f
http://lup.lub.lu.se/record/4286497
http://lup.lub.lu.se/record/4286497
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced bor
Autor:
Thomas Mikolajick, Stefan Jakschik, Matthias Goldbach, Lothar Frey, Guntrade Roll, Andre Wachowiak
Publikováno v:
Proceedings of Technical Program of 2012 VLSI Technology, System and Application.
The gate leakage (I Gate , table 1) is reduced compared to the conventional 65nm process with SiON dielectric (Fig. 2). The leakage current due to direct tunneling is simulated using the CET as fitting parameter. High-k PFETs with an oxide extension
Autor:
Alexander Burenkov, Stefan Jakschik, Guntrade Roll, Thomas Mikolajick, Lothar Frey, Matthias Goldbach
In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on the leakage current and defect density in PFET transistors. Carbon is used to reduce the transient enhanced boron diffusion,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a6cbb0f47045d3629147a3e11609fe1
https://publica.fraunhofer.de/handle/publica/226485
https://publica.fraunhofer.de/handle/publica/226485
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
In this paper we present a detailed investigation on the influence of carbon co-implantation in the source/drain extension on leakage current and defect density in PFET transistors. Carbon is used to reduce the transient enhanced boron diffusion, to
Publikováno v:
Applied Physics Letters. 106:203503
The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap Dit, however, the HfO2 transistors reach a h