Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Gunstein Skomedal"'
Autor:
Raphael Schuler, Daniel Nilsen Wright, M. Stange, Joachim Moe Graff, Matthias Schrade, Ole Martin Løvvik, Gustavo Castillo-Hernandez, Xin Song, Johannes de Boor, Gunstein Skomedal, Erik Enebakk
Publikováno v:
Journal of Electronic Materials
Thermoelectric modules can be used in waste heat harvesting, sensing, and cooling applications. Here, we report on the fabrication and performance of a four-leg module based on abundant silicide materials. While previously optimized Mg2Si0.3Sn0.675Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab0f7f26019c5c9f6966807e7065ea9a
https://hdl.handle.net/11250/3047820
https://hdl.handle.net/11250/3047820
Autor:
Gunstein Skomedal, Naureen Akhtar, Antoine de Padoue Shyikira, Peter Hugh Middleton, Tor Oskar Saetre
Publikováno v:
Corrosion Science
The oxidation kinetics and mechanisms of higher manganese silicides (HMS) MnSi1.75, MnSi (1.75-x)Gex, MnSi(1.75-x)Alx (with x = 0.005 and 0.01)were studied and the effects of densification methods and dopant concentration discussed. Oxidation experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b357a0be1eaedfff3205ace5a878a468
https://hdl.handle.net/11250/2837304
https://hdl.handle.net/11250/2837304
Autor:
Gunstein Skomedal, Armin Feldhoff, Temesgen Debelo Desissa, Nikola Kanas, Tor Grande, Kjell Wiik, Mari-Ann Einarsrud
Publikováno v:
Journal of Electronic Materials
Here, we present the performance of a thermoelectric (TE) module consisting of n-type (La0.12Sr0.88)0.95TiO3 and p-type Ca3Co4-xO9+δ materials. The main challenge in this investigation was operation of TE module in different atmosphere conditions, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27c53b6073693e2d2df207b6f0845ff4
https://hdl.handle.net/11250/2681693
https://hdl.handle.net/11250/2681693
Publikováno v:
Journal of Applied Physics
More than 1000 crystalline silicide materials have been screened for thermoelectric properties using first-principles atomistic calculations coupled with the semi-classical Boltzmann transport equation. Compounds that contain radioactive, toxic, rare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad993c02cce60e306dbf77d0d19e9da3
https://hdl.handle.net/11250/3025053
https://hdl.handle.net/11250/3025053
The effect of Mo and Ge reactive elements on high-temperature oxidation of higher manganese silicide
Publikováno v:
Corrosion Science
Higher manganese silicide (HMS) alloys (Mnx-αMoαSiy-βGeβ (x = 0.99–1.011, α = 0.005–0.02, y = 1.75, β = 0.005–0.01)) were studied to elucidate the effect of Mo and Ge pertaining to oxidation. Oxidation experiments were conducted using the
Publikováno v:
Energy Efficiency. 11:1375-1395
Buildings in private and domestic use are responsible for about 30% of the global greenhouse gas emissions attributable mainly to their need for heating and cooling energy. This corresponds to about 40% of the global final energy consumption. Therefo
Publikováno v:
Journal of Electronic Materials. 46:2438-2450
Thermoelectric generators are a promising technology for waste heat recovery. As new materials and devices enter a market penetration stage, it is of interest to employ fast and efficient measurement methods to evaluate the long-term stability of the
Publikováno v:
Corrosion Science. 111:325-333
High temperature oxidation of Mg 2 Si 1- x Sn x alloys ( x = 0.1 0.6) has been investigated. The oxidation rate was slow for temperatures below 430 °C. In the temperature range between 430500 °C all the alloys exhibited breakaway oxidation.
Publikováno v:
Journal of Electronic Materials. 45:1397-1407
We have investigated p-type skutterudite samples with the nominal composition Ce0.6Co2Fe2Sb12 synthesized from elementary constituents by gas atomization and conventional melting, and also those synthesized from ternary and binary phases such as Fe x
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology. 225:1023-1035
The main goals for the silicon wafering industry are to improve the surface quality of wafers by reducing the total thickness variation and subsurface defects and to increase the production by reducing the wafer thickness. To attain these goals, it i