Zobrazeno 1 - 10
of 937
pro vyhledávání: '"Gunnarsson D."'
Autor:
Autti, S., Bettsworth, F. C., Grigoras, K., Gunnarsson, D., Haley, R. P., Jones, A. T., Pashkin, Yu. A., Prance, J. R., Prunnila, M., Thompson, M. D., Zmeev, D. E.
On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamic
Externí odkaz:
http://arxiv.org/abs/2209.07099
Autor:
Gunnar Nordberg
Publikováno v:
Journal of Trace Elements in Experimental Medicine; Dec2003, Vol. 16 Issue 4, p307-319, 13p
Autor:
Bradley, D. I., Guénault, A. M., Gunnarsson, D., Haley, R. P., Holt, S., Jones, A. T., Pashkin, Yu. A., Penttilä, J., Prance, J. R., Prunnila, M., Roschier, L.
Publikováno v:
Sci. Rep. 7, 45566 (2017)
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the electrons direct
Externí odkaz:
http://arxiv.org/abs/1611.02483
Autor:
Prance, J. R., Bradley, D. I., George, R. E., Haley, R. P., Pashkin, Yu. A., Sarsby, M., Penttilä, J., Roschier, L., Gunnarsson, D., Heikkinen, H., Prunnila, M.
Publikováno v:
Nat. Commun 7, 10455 (2016)
We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolated from electrical noise, and not susceptible to self-heating. This is
Externí odkaz:
http://arxiv.org/abs/1505.07244
Autor:
Prest, M J, Richardson-Bullock, J S, Zhao, Q T, Muhonen, J T, Gunnarsson, D, Prunnila, M, Shah, V A, Whall, T E, Parker, E H C, Leadley, D R
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin
Externí odkaz:
http://arxiv.org/abs/1405.4119
Autor:
Feshchenko, A. V., Meschke, M., Gunnarsson, D., Prunnila, M., Roschier, L., Penttilä, J. S., Pekola, J. P.
Publikováno v:
J. Low Temp. Phys. 173, 36 (2013)
We investigate Coulomb blockade thermometers (CBT) in an intermediate temperature regime, where measurements with enhanced accuracy are possible due to the increased magnitude of the differential conductance dip. Previous theoretical results show tha
Externí odkaz:
http://arxiv.org/abs/1206.0548
Autor:
Prest, M. J., Muhonen, J. T., Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., Leadley, D. R.
Publikováno v:
Applied Physics Letters 99, 251908 (2011)
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK
Externí odkaz:
http://arxiv.org/abs/1111.0465
Autor:
Muhonen, J. T., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., Leadley, D. R.
Publikováno v:
Appl. Phys. Lett. 98, 182103 (2011)
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained
Externí odkaz:
http://arxiv.org/abs/1101.5889
Publikováno v:
J. Vac. Sci. Technol. B 28, 1026 (2010)
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom elect
Externí odkaz:
http://arxiv.org/abs/1006.2436
Autor:
Nordberg, Gunnar
Publikováno v:
The Journal of Trace Elements in Experimental Medicine; 2003, Vol. 16 Issue: 4 p307-319, 13p