Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Gunnar Landgren"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3-4 (2000)
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated. The results showe
Externí odkaz:
https://doaj.org/article/ac87e5e779614e5babac324457fbd361
Publikováno v:
Journal of Crystal Growth. 312:3151-3155
Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH3) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad69b81b9280ddd2073e7b5620d7863
https://doi.org/10.1016/j.jcrysgro.2010.07.063
https://doi.org/10.1016/j.jcrysgro.2010.07.063
Publikováno v:
Journal of Crystal Growth. 248:431-436
GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f273dc7ca2cc81dcbc6add69a40334c7
https://doi.org/10.1016/s0022-0248(02)01936-x
https://doi.org/10.1016/s0022-0248(02)01936-x
Publikováno v:
Journal of Crystal Growth. :259-263
The epitaxial quality of Si (non-selective or selective epitaxy)/SiGe (non-selective or selective epitaxy) structures applying Si2H2Cl2 or SiH4 as the Si source has been studied. High-resolution reciprocal lattice mapping and X-ray reflectivity measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d041a1398d6f816f0dd05857842d1efb
https://doi.org/10.1016/s0022-0248(01)01879-6
https://doi.org/10.1016/s0022-0248(01)01879-6
Publikováno v:
Journal of Electronic Materials. 29:1398-1401
We have investigated the growth of quaternary In1−xGaxAsyP1−y/InP materials using TBA and TBP in a N2 ambient. This process improves significantly the uniformity of In1−xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4570d75a375012f90b05401ffb60f164
https://doi.org/10.1007/s11664-000-0125-1
https://doi.org/10.1007/s11664-000-0125-1
Autor:
Bengt Gunnar Malm, M. Jargelius, Gunnar Landgren, H. Fosshaug, Pär Jönsson, J. Pejnefors, B. Mohadjeri, Mikael Östling, J.V. Grahn, Henry H. Radamson, M. Sanden, Yong-Bin Wang, M. Linder
Publikováno v:
Solid-State Electronics. 44:549-554
A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor d ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e040b4977e32361614e97b0b020ce6
https://doi.org/10.1016/s0038-1101(99)00266-x
https://doi.org/10.1016/s0038-1101(99)00266-x
Publikováno v:
Journal of Crystal Growth. 204:256-262
We have investigated the growth of InP and InGaAs/InP using TBA and TBP in N2 ambient. This process eliminates both the explosive H2 and the toxic hydrides as precursors. General growth aspects are reported and the process window for defect free grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3722ab460f58191d42192e24c0286ecb
https://doi.org/10.1016/s0022-0248(99)00210-9
https://doi.org/10.1016/s0022-0248(99)00210-9
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2251-2256
Cross-sectional scanning tunneling microscopy (STM) and scanning tunneling spectroscopy are used to study strain-compensated InGaAsP/InAsP superlattices grown by metalorganic vapor phase epitaxy, with or without an InP layer inserted in the InAsP bar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de4e92597b660b762ddec2fbd1646d43
https://doi.org/10.1116/1.581756
https://doi.org/10.1116/1.581756
Publikováno v:
Thin Solid Films. :374-377
We present investigations of N 2 /H 2 /CH 4 based chemically assisted ion beam etching (CAIBE) process for InP/GaInAsP. The novelty lies in using nitrogen as the inert ion species in the etch chemistry. The etch induced damage was evaluated by photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b82672afaa4c494631f8e3321778233
https://doi.org/10.1016/s0040-6090(98)01725-8
https://doi.org/10.1016/s0040-6090(98)01725-8
Publikováno v:
Scopus-Elsevier
In this work, InP-based buried heterostucture lasers are used to demonstrate the utility of scanning capacitance microscopy (SCM) for characterising complex device structures. The lasers use p-n ju ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6e27a38ed9982e4cce4e0a1afced439
https://doi.org/10.1016/s0169-4332(98)00784-3
https://doi.org/10.1016/s0169-4332(98)00784-3