Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Gunjan Rastogi"'
Autor:
null Manish Kumar Sahu, null Ajaya Kumar PS, null Chiranjit Karmakar, null Gunjan Rastogi, null R. K. Kaneriya, null R. B. Upadhyay
Publikováno v:
Nanoarchitectonics. :16-25
Surface Acoustic Wave (SAW) filters provide precise frequency filtering in RF and IF range with a tiny footprint. Metallic thin films are the essence of such modern SAW filter technology. However, SAW filters realized using NiCr/Al thin films are lim
A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications
Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cf6f322b15a65e1e0ddf657f7fc74a1
https://doi.org/10.5772/intechopen.98435
https://doi.org/10.5772/intechopen.98435
Publikováno v:
Radio Science. 54:1172-1180
Publikováno v:
Radio Science. 54:904-909
Formation of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures plays a vital role in high power and high frequency device technology. Such kinds of heterostructures are used for the fabrication of high electron mobility transistors (HE
Autor:
R.K. Kaneriya, Chiranjit Karmakar, Gunjan Rastogi, M.R. Patel, R.B. Upadhyay, Punam Kumar, A.N. Bhattacharya
Publikováno v:
Microelectronic Engineering. 255:111724
Publikováno v:
2020 URSI Regional Conference on Radio Science ( URSI-RCRS).
This paper presents the computational study of the combined metamaterial driven inter-sub band transition phenomenon in GaN HEMT which is possible mode to extend its operating frequency well beyond its present cutoff frequency to THz band. It has bee
Autor:
R.K. Kaneriya, R.B. Upadhyay, Gunjan Rastogi, U.S. Joshi, Chiranjit Karmakar, Punam Pradeep Kumar
Publikováno v:
Physics Letters A. 417:127693
We have conducted a comprehensive investigation of the magneto-transport properties of Al0.30Ga0.70N/GaN and Al0.30Ga0.70N/AlN/GaN based HEMT structure in terms of inelastic scattering time via weak localization (WL) measurement. Owing to 1 nm AlN in
Autor:
Ekta Yadav, A N Bhattacharya, Gunjan Rastogi, R.K. Kaneriya, Sanjeev Khare, M. Krishna Chaitanya, R.B. Upadhyay, Punam Pradeep Kumar
Publikováno v:
Microelectronic Engineering. 249:111617
In the present study, new process of N2 pre-treated (NP) Si3N4 passivation on Al0.3Ga0.7N/AlN/GaN HEMTs (High Electron Mobility Transistors)has been developed and its impact on DC and RF performance of HEMTs has been investigated. Additionaly, this s
Publikováno v:
2019 URSI Asia-Pacific Radio Science Conference (AP-RASC).
In the present work, undoped AlGaN/AlN/GaN heterostructure has been simulated and physics based device model has been developed for GaN high-electron-mobility transistors (HEMT) based Terahertz applications. The heterostructure properties like electr
Publikováno v:
2019 URSI Asia-Pacific Radio Science Conference (AP-RASC).
Formation of a two-dimensional electron gas (2DEG) in AlGaN/AlN/GaN heterostructures plays a vital role in high power and high frequency device technology. Such kinds of heterostructures are used for the fabrication of High Electron Mobility Transist