Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Gunjan Nagda"'
Autor:
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad, Daria V. Beznasyuk, Christian E. N. Petersen, Sara Martí-Sánchez, Jordi Arbiol, Thomas S. Jespersen
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-
Externí odkaz:
https://doaj.org/article/06722eebc1124cd98770333e6945c695
Autor:
Morten Hannibal Madsen, Rawa Tanta, Gunjan Nagda, Anna Wulff Christensen, Peter Krogstrup, Sergej Schuwalow, Daria Beznasyuk, Martin Espiñeira Cachaza, Tobias Særkjær
Publikováno v:
Physical Review Materials
Cachaza, M E, Christensen, A W, Beznasyuk, D, Saerkjaer, T, Madsen, M H, Tanta, R, Nagda, G, Schuwalow, S & Krogstrup, P 2021, ' Selective area growth rates of III-V nanowires ', Physical Review Materials, vol. 5, no. 9, 094601 . https://doi.org/10.1103/PhysRevMaterials.5.094601
Cachaza, M E, Christensen, A W, Beznasyuk, D, Saerkjaer, T, Madsen, M H, Tanta, R, Nagda, G, Schuwalow, S & Krogstrup, P 2021, ' Selective area growth rates of III-V nanowires ', Physical Review Materials, vol. 5, no. 9, 094601 . https://doi.org/10.1103/PhysRevMaterials.5.094601
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5abe06e21bf023b4fdb83f4b76d05dc
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We present results about the growth, structural properties and electrical transport of InAs/GaSb core-shell nanowires. The nanowire are grown self-seeded and selectively by molecular beam epitaxy on patterned SiO 2 /Si(111) substrates. The two combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439f3fb087a43f7bea9af112aec2105f
https://doi.org/10.1109/iciprm.2019.8819061
https://doi.org/10.1109/iciprm.2019.8819061
Autor:
Olšteins, Dāgs, Nagda, Gunjan, Carrad, Damon J., Beznasyuk, Daria V., Petersen, Christian E. N., Martí-Sánchez, Sara, Arbiol, Jordi, Jespersen, Thomas S.
Publikováno v:
Nature Communications; 11/25/2023, Vol. 14 Issue 1, p1-7, 7p
Publikováno v:
Nanotechnology; 7/2/2023, Vol. 34 Issue 27, p1-7, 7p