Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Gundlach, David"'
Autor:
Bindra, Jasleen K., Shrestha, Pragya R., Engmann, Sebastian, Cruz, Chad D., Gundlach, David J., Bittle, Emily G., Campbell, Jason P.
Publikováno v:
In Materials Today Advances March 2024 21
Autor:
Gundlach, David L.
Publikováno v:
abstract and full text PDF (free order & download UNR users only).
Thesis (M.S.)--University of Nevada, Reno, 2008.
"August, 2008." Includes bibliographical references (leaves 37-42). Online version available on the World Wide Web.
"August, 2008." Includes bibliographical references (leaves 37-42). Online version available on the World Wide Web.
Autor:
Li, Wei, Zhang, Qin, Bijesh, R., Kirillov, Oleg A., Liang, Yiran, Levin, Igor, Peng, Lian-Mao, Richter, Curt A., Liang, Xuelei, Datta, S., Gundlach, David J., Nguyen, N. V.
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at th
Externí odkaz:
http://arxiv.org/abs/1410.1109
Autor:
Li, Wei, Birdwell, A. Glen, Amani, Matin, Burke, Robert A., Ling, Xi, Lee, Yi-Hsien, Liang, Xuelei, Peng, Lianmao, Richter, Curt A., Kong, Jing, Gundlach, David J., Nguyen, N. V.
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intr
Externí odkaz:
http://arxiv.org/abs/1407.6997
Autor:
Li, Wei, Hacker, Christina A., Liang, Yiran, Richter, Curt A., Gundlach, David J., Liang, Xuelei, Peng, Lianmao
Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/grap
Externí odkaz:
http://arxiv.org/abs/1303.1353
Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Autor:
Yan, Rusen, Zhang, Qin, Kirillov, Oleg A., Li, Wei, Basham, James, Boosalis, Alex, Liang, Xuelei, Jena, Debdeep, Richter, Curt A., Seabaugh, Alan, Gundlach, David J., Xing, Huili G., Nguyen, N. V.
Publikováno v:
Applied Physics Letters Applied Physics Letters Applied Physics Letters 102 12 123106-123106-5 (2013)
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th
Externí odkaz:
http://arxiv.org/abs/1212.5335
Autor:
Li, Wei, Liang, Yiran, Yu, Dangmin, Peng, Lianmao, Pernstich, Kurt P., Shen, Tian, Walker, A. R. Hight, Cheng, Guangjun, Hacker, Christina A., Richter, Curt A., Li, Qiliang, Gundlach, David J., Liang, Xuelei
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD
Externí odkaz:
http://arxiv.org/abs/1212.0838
Akademický článek
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Autor:
Li, Wei, Cheng, Guangjun, Liang, Yiran, Tian, Boyuan, Liang, Xuelei, Peng, Lianmao, Hight Walker, A.R., Gundlach, David J., Nguyen, Nhan V.
Publikováno v:
In Carbon April 2016 99:348-353
Akademický článek
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