Výsledky vyhledávání - "Gundlach, D. J."

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High charge-carrier mobility and low trap density in a rubrene derivative

Autor: Haas, S., Stassen, A. F., Schuck, G., Pernstich, K. P., Gundlach, D. J., Batlogg, B., Berens, U., Kirner, H. -J.

Publikováno v: Phys. Rev. B 76, 115203 (2007)

We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed

Externí odkaz: http://arxiv.org/abs/0707.0461

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Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene

Autor: Krellner, C., Haas, S., Goldmann, C., Pernstich, K. P., Gundlach, D. J., Batlogg, B.

Publikováno v: Phys. Rev. B 75, 245115 (2007)

The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscop

Externí odkaz: http://arxiv.org/abs/0704.3218

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Evidence of Water-related Discrete Trap State Formation in Pentacene Single Crystal Field-Effect Transistors

Autor: Goldmann, C., Gundlach, D. J., Batlogg, B.

We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experimen

Externí odkaz: http://arxiv.org/abs/cond-mat/0508607

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Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

Autor: Pernstich, K. P., Rashid, A. N., Haas, S., Schitter, G., Oberhoff, D., Goldmann, C., Gundlach, D. J., Batlogg, B.

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior t

Externí odkaz: http://arxiv.org/abs/cond-mat/0410014

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Hole mobility in organic single crystals measured by a 'flip-crystal' field-effect technique

Autor: Goldmann, C., Haas, S., Krellner, C., Pernstich, K. P., Gundlach, D. J., Batlogg, B.

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degra

Externí odkaz: http://arxiv.org/abs/cond-mat/0403210

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