Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Gun Wu Ju"'
Autor:
Inhee Maeng, Gyuseok Lee, Chul Kang, Gun Wu Ju, Kwangwook Park, Seoung-Bum Son, Yong-Tak Lee, Chul-Sik Kee
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125027-125027-7 (2018)
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insu
Externí odkaz:
https://doaj.org/article/4d81afa2291c413ab865aaea9fcdd59c
Publikováno v:
Advances in Condensed Matter Physics, Vol 2015 (2015)
Resonant cavity optoelectronic devices, such as vertical cavity surface emitting lasers (VCSELs), resonant cavity enhanced photodetectors (RCEPDs), and electroabsorption modulators (EAMs), show improved performance over their predecessors by placing
Externí odkaz:
https://doaj.org/article/4aa00f0a23a54fb0822a47e296f396e6
Autor:
Jae-Phil Shim, Byeong-Hyeon Lee, Sanghyeon Kim, Hyung-jun Kim, Seong Kwang Kim, Hansung Kim, Gun Wu Ju, Sung Ok Won
Publikováno v:
Thin Solid Films. 649:38-42
The anisotropic surface morphology of a tensile-strained In0.42Al0.58As layer grown on an InP(100) substrate was investigated by means of observing the cross-hatch patterns between two orthogonal in-plane directions: [011] and 0 1 ¯ 1 . Analysis res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f012dd19d6b06fd2b7a5bae8f5117c
https://doi.org/10.1016/j.tsf.2018.01.026
https://doi.org/10.1016/j.tsf.2018.01.026
Autor:
Jae-Phil Shim, Sanghyeon Kim, Hyeong-Rak Lim, Hansung Kim, Hyung-jun Kim, Seong Kwang Kim, Jae-Hoon Han, Gun Wu Ju
Publikováno v:
IEEE Transactions on Electron Devices. 65:1253-1257
In this brief, we fabricated Ge (110)-on-insulator (-OI) structures on Si substrates via wafer bonding and epitaxial lift-off (ELO) process using Ge layer grown on GaAs for low-temperature layer stacking toward monolithic 3-D integration. We also sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81eacdcfdb1bf045a302dc26ecf3a951
https://doi.org/10.1109/ted.2018.2793285
https://doi.org/10.1109/ted.2018.2793285
Autor:
Dae-Myeong Geum, Won Jun Choi, Hosung Kim, Chang-Mo Kang, Hyung-jun Kim, Hyeong-Rak Lim, Jae-Phil Shim, Jin Dong Song, Jae-Hoon Han, Dong-Seon Lee, Seongkwang Kim, Sanghyeon Kim, Hansung Kim, Subin Lee, Gun Wu Ju, Heejeong Lim, Pavlo Bidenko
Publikováno v:
IEEE Journal of the Electron Devices Society. 6:579-587
Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c0cf0102e447c842aedf6ef3e46f56a
https://doi.org/10.1109/jeds.2018.2802840
https://doi.org/10.1109/jeds.2018.2802840
Publikováno v:
Journal of the Korean Physical Society. 72:197-200
We present single-material distributed Bragg reflectors (DBRs) fabricated by oblique-angle deposition of amorphous silicon (a-Si). The high and low refractive indices of a-Si films were obtained at two incident vapour flux angles (θα) of 0° and 80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8535bb0af9450e2e4803400e8bd8ea4
https://doi.org/10.3938/jkps.72.197
https://doi.org/10.3938/jkps.72.197
Autor:
In Won Yeu, Hyun Cheol Koo, Gun Wu Ju, Young-hun Shin, Jung-Hae Choi, Yun Joong Lee, Hansung Kim, Hyung-jun Kim, Gyuseung Han
Publikováno v:
Journal of Alloys and Compounds. 874:159848
The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer thickness up to 1 µm. Ga and As atoms coexisting in a one-to-one atomic ratio on the (110)-oriente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7044665867150381b17c9974104ed764
https://doi.org/10.1016/j.jallcom.2021.159848
https://doi.org/10.1016/j.jallcom.2021.159848
Autor:
Bong-Joong Kim, Kwangwook Park, Sooraj Ravindran, Jung-Wook Min, Sang-Youp Yim, Yong Tak Lee, Seokjin Kang, Yong-Ryun Jo, NoSoung Myoung, Gun Wu Ju
Publikováno v:
Current Applied Physics. 16:1622-1626
GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd263da1486c26a2c82ac040a902525
https://doi.org/10.1016/j.cap.2016.08.025
https://doi.org/10.1016/j.cap.2016.08.025
Autor:
Kwangwook Park, Gun Wu Ju, Hong Gyu Park, Young Min Song, Gil Ju Lee, Tae Joon Seok, Min Seok Kim, Kyujung Kim, Sehui Chang
Publikováno v:
Advanced Optical Materials. 8:2070070
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720275c7d8b33e5f7200d7a106c0162f
https://doi.org/10.1002/adom.202070070
https://doi.org/10.1002/adom.202070070
Autor:
Tae Joon Seok, Sehui Chang, Kyujung Kim, Hong Gyu Park, Kwangwook Park, Gil Ju Lee, Min Seok Kim, Young Min Song, Gun Wu Ju
Publikováno v:
Advanced Optical Materials. 8:2000198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b8d3fe1d1ac0456dad6df075320e2c
https://doi.org/10.1002/adom.202000198
https://doi.org/10.1002/adom.202000198