Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Gun Woo Hyung"'
Autor:
Ja-Ryong Koo, Seok Jae Lee, Gun Woo Hyung, Dong Whan Im, Han Sung Yu, Jung-Hwan Park, Kum Hee Lee, Seung Soo Yoon, Woo Young Kim, Young Kwan Kim
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012117-012117-6 (2012)
We demonstrate red phosphorescent organic light-emitting diodes (OLEDs) with multiple quantum well structures which confine triplet exciton inside an emitting layer (EML) region. Five types of OLEDs, from a single to five quantum wells, are fabricate
Externí odkaz:
https://doaj.org/article/6da9bb02072b4c159e70fc02d2403e02
Autor:
Ja Ryong Koo, Dong Hyung Lee, Bo Young Kim, Woo Young Kim, Young Kwan Kim, Kum Hee Lee, Gun Woo Hyung, Seung Soo Yoon, Seok Jae Lee
Publikováno v:
Thin Solid Films. 544:234-237
The authors have demonstrated a highly efficient and stable phosphorescent white organic light-emitting diode (WOLED), which has been achieved by doping only one orange phosphorescent emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N)iridium(II
Autor:
Young Kwan Kim, Eou-Sik Cho, Zhao-Hui Li, Gun Woo Hyung, Sang Jik Kwon, Ja Ryong Koo, Jian-Xun Wang
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:4052-4055
We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showe
Autor:
Ja Ryong Koo, Gun Woo Hyung, Seok Jae Lee, You Hyun Kim, Dong Hyung Lee, Ho Won Lee, Woo Young Kim, Young Kwan Kim
Publikováno v:
Organic Electronics. 13:2594-2599
To improve the performance of bottom-emission organic light-emitting diodes (BEOLEDs), the effect of oxygen plasma treatment duration on the electrical properties of multi-metal Ni/Ag/Ni thin film anode was investigated. The results revealed that a N
Publikováno v:
Journal of the Korean Physical Society. 61:1720-1723
We have fabricated pentacene thin-film transistors (TFTs) with a gate dielectric such as cross-linked poly(vinyl alcohol) (c-PVA), with poly(9-vinylcarbazole) (PVK) buffer layer on a polyether-sulfone (PES) flexible substrate, and with substrate heat
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:5444-5448
In this paper, the improved device performance of top-emitting organic light-emitting diodes (TEOLEDs) with a thin multi-metal layer stack of nickel/silver/nickel (Ni/Ag/Ni) and aluminum/silver/aluminum (Al/Ag/Al) that were used as the anode and cath
Autor:
Eou Sik Cho, Young Kwan Kim, Gun Woo Hyung, Sang Jik Kwon, Zhao-Hui Li, Sung-Yong Son, Jian-Xun Wang
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:5644-5647
In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electric
Autor:
Jaehoon Park, Eou Sik Cho, Yong Seog Kim, Kyung Min Choi, Sang Jik Kwon, Young Kwan Kim, Ja Ryong Koo, Gun Woo Hyung
Publikováno v:
Solid-State Electronics. 69:27-30
Zinc oxide (ZnO) thin-film transistors (TFTs) with a cross-linked poly(vinyl alcohol) (c-PVA) insulator are fabricated on a polyethersulfone substrate. The ZnO film, formed by atomic layer deposition, shows a polycrystalline hexagonal structure with
Autor:
Jin Woo Yang, Ho Won Lee, Sang Jik Kwon, Ja Ryong Koo, Kyung Seo Jung, Jaehoon Park, Gun Woo Hyung, Eou Sik Cho, Young Kwan Kim
Publikováno v:
Molecular Crystals and Liquid Crystals. 550:205-211
In this paper we have studied a low-temperature process of fabricating zinc oxide (ZnO) thin-film transistors (TFTs) on polyethylene terephthlate (PET) substrate. PET film has a lower glass transition temperature (Tg = 120°C) than costly Polyethersu
Autor:
Eou Sik Cho, Gun Woo Hyung, Ja Ryong Koo, Sang Jik Kwon, Jin Woo Yang, Young Kwan Kim, Kyung Min Choi
Publikováno v:
Molecular Crystals and Liquid Crystals. 529:131-136
In the fabrication of transparent conductive oxide thin film transistor (TFT), an atomic layer deposited (ALD) zinc oxide (ZnO) and a cross-linked poly-vinyl-alcohol (c-PVA) were each used as active layer and gate insulating layer on poly-ethylene (P