Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Gun Rae Kim"'
Publikováno v:
Science of Advanced Materials. 12:577-582
In this paper, the effects of moisture sensitivity during preconditioning (30 °C/60% RH, 192 hours) tests and material property changes after reliability stressing on flip chip chip-scale package (FCCSP) were comprehensively investigated by various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a428d598c1402df6f6ff22e91e4ea682
https://doi.org/10.1166/sam.2020.3669
https://doi.org/10.1166/sam.2020.3669
Autor:
Dong-Hwee Hwang, Yong-Sik Kim, Minji Seo, Kyongsik Yeom, Young Ki Hong, Yong Seok Chung, MyeongHee Oh, Jongsung Woo, Young-cheon Jeong, Sungyoung Yoon, Sangjin Lee, Chang-Min Jeon, Dong-Hyun Kim, Jae-Hun Lee, S. L. Cho, D.H. Kim, Ga-Young Lee, Gun Rae Kim, HyunChang Lee, Yong-Kyu Lee, Hyun-Jin Shin
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Based on robustness of split-gate embedded Flash (eFlash) bit-cell, 28-nm eFlash process with Flash IP (20Mb) and SRAM IP (32Mb) is developed for automotive Grade 1 (G1) application with temperature range of (−40∼150°C) for the first time. In ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77520e6b5e0c91ff52b383f30b542789
https://doi.org/10.1109/imw51353.2021.9439602
https://doi.org/10.1109/imw51353.2021.9439602
Publikováno v:
MATERIALS TRANSACTIONS. 59:1487-1492
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c437c506a1a760160d22fad1423bced8
https://doi.org/10.2320/matertrans.mg201803
https://doi.org/10.2320/matertrans.mg201803
Publikováno v:
MATERIALS TRANSACTIONS. 57:1966-1971
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803d74b819d84748d755a8490b6e424e
https://doi.org/10.2320/matertrans.m2016203
https://doi.org/10.2320/matertrans.m2016203
Publikováno v:
Chemical Engineering Science. 58:1103-1111
The mass transfer characteristics in honeycombs made of catalyst-deposited metal wire meshes (wire-mesh honeycomb; WMH) were studied to test the prediction that WMH has better flow distribution and a higher rate of interphase mass transfer than the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8022a954fad5dea7bdea8f450e1fccad
https://doi.org/10.1016/s0009-2509(02)00546-8
https://doi.org/10.1016/s0009-2509(02)00546-8
Autor:
Chi Sun Ju, Ho Geon Song, Young-Bae Kim, Byoung Wook Jang, Jong Kook Kim, Yoon Ha Jung, Ki-Chul Park, Sang Man Lee, Seok Won Lee, Sa Yoon Kang, Gun Rae Kim, Young-Min Kang
Publikováno v:
2012 IEEE 62nd Electronic Components and Technology Conference.
The continuous scaling down of devices has led to increase use of smaller interconnect features that can increase the interconnection delays. In order to reduce such interconnection delays, low-k dielectric has been introduced, and then for advanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb32e1150e71a53af294a15a26276f03
https://doi.org/10.1109/ectc.2012.6249052
https://doi.org/10.1109/ectc.2012.6249052
Autor:
Gun Rae Kim, Hyun-chul Sagong, Woo-kyum Lee, June-Kyun Park, Sang-woo Pae, Jong-woo Park, Byoung-deog Choi
Publikováno v:
ECS Meeting Abstracts. :836-836
Deuterium annealing has been widely used to help improve hot carrier injection (HCI) reliability of CMOS devices[1]. With introduction of high-k, and especially the gate-last metal gate processes, which decouples the high temperature annealing proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d4c96c37f0556f5f74bd6076283a83
https://doi.org/10.1149/ma2015-02/18/836
https://doi.org/10.1149/ma2015-02/18/836
Publikováno v:
ECS Meeting Abstracts. :860-860
Semiconductor lithography scanners are extremely complex equipment which is used to manufacture IC(Intergrated Circuit). Moore's law, which states that the computing power per chip doubles every one and a half to two years, has consistently held for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0456e04d176a3072af3e041d703295
https://doi.org/10.1149/ma2015-02/18/860
https://doi.org/10.1149/ma2015-02/18/860
Publikováno v:
2011 18th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2011, p1-7, 7p
Publikováno v:
2010 IEEE International Reliability Physics Symposium (IRPS); 2010, p265-270, 6p