Zobrazeno 1 - 10
of 336
pro vyhledávání: '"Gulyaev Yu. V."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 3-5 (2011)
A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and
Externí odkaz:
https://doaj.org/article/9d195c9b1f634662960b58b2664afd4b
Autor:
Chigarev, S. G., Epshtein, E. M., Gulyaev, Yu. V., Kotov, V. D., Mikhailov, G. M., Zilberman, P. E.
We calculate the response of a ferromagnet - antiferromagnet junction to a high-frequency magnetic field as a function of the spin-polarized current through the junction. Conditions are choused under which the response is zero in absence of such a cu
Externí odkaz:
http://arxiv.org/abs/1203.0114
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted antiferromagnetic configur
Externí odkaz:
http://arxiv.org/abs/1112.2362
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet junction. The macrospin approximation is generalized to antiferromagnets. Canted antiferromagnetic configuratio
Externí odkaz:
http://arxiv.org/abs/1106.3519
Autor:
Gulyaev, Yu. V., Chigarev, S. G., Malikov, I. V., Mikhailov, G. M., Zilberman, P. E., Epshtein, E. M.
Energy efficiency in terahertz range is evaluated experimentally of a spin-injection oscillator based on a ferromagnetic rod-film structure with point contact between the components. Choice of the film material influences substantially the efficiency
Externí odkaz:
http://arxiv.org/abs/1105.5702
Autor:
Chigarev, S. G., Epshtein, E. M., Gulyaev, Yu. V., Malikov, I. V., Mikhailov, G. M., Panas, A. I., Shofman, V. G., Zilberman, P. E.
Electromagnetic radiation of 1 - 10 THz range has been found at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to none
Externí odkaz:
http://arxiv.org/abs/1101.5683
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the magnetic atom
Externí odkaz:
http://arxiv.org/abs/1011.4303
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal spins with mag
Externí odkaz:
http://arxiv.org/abs/1010.4417
The results are presented of a numerical simulation of the switching magnetic junction by a spin-polarized current pulse under applied magnetic field with the current density and field below the threshold values. A possibility is shown of the switchi
Externí odkaz:
http://arxiv.org/abs/1007.3889
The stability is analyzed of the equilibrium configurations of a magnetic junction with a free layer that has cubic symmetry and two anisotropy axes in the layer plane. Different variants of the switching between various configurations are considered
Externí odkaz:
http://arxiv.org/abs/1007.2097