Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Guk-Jin Kim"'
Publikováno v:
Microelectronic Engineering. 177:35-40
To solve the defect problem during the exposure process of EUV lithography (EUVL), an EUV pellicle is suggested as a solution. Even though use of an EUV pellicle is considered an essential solution for defect control during the exposure process, it i
Publikováno v:
Journal of Soil and Groundwater Environment. 21:14-20
Remediation of crude oil contaminated soil is complicate and hard to apply traditional methods because of its persistency,durability, and high viscosity. Therefore, in this study, the efficiency of crude oil contaminated soil remediation was testedby
Publikováno v:
Journal of Soil and Groundwater Environment. 21:72-79
Bioremediation is one of the most effective ways to remediate TPH-contaminated sites. However, under actual field conditions that are not at the optimum temperature, degradation of microorganisms is generally reduced, which is why the efficiency of b
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
In EUV lithography, one of problems is defect control, so that the EUV pellicle is required to protect EUV mask from contaminations. The EUV pellicle should be extremely thin thickness and it is easy to be deformed as wrinkle and deflection during th
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
The extreme-ultraviolet (EUV) mask cannot be inspected by using actinic inspection system because there is no commercial EUV actinic mask inspection system available yet. Moreover, the EUV pellicle must be removed if the EUV mask is inspected by non-
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) pellicle is required for protecting the EUV mask from defects, contaminations, and particles during exposure process. EUV pellicle should be very thin for high transmission of EUV wavelength. Therefore, EUV pellicle can be e
Publikováno v:
SPIE Proceedings.
There has been reports of EUV scanner aberration effects to the patterns down to 18 nm half-pitch (hp). Maximum aberration of the latest EUV scanner is reported as 25 mλ. We believe that the first EUV mass production will be applied to the devices o
Publikováno v:
SPIE Proceedings.
EUV lithography is one of the promising technologies for 1X nm patterning. EUV lithography has high resolution capability because of short wavelength of source but it has some particular patterning problems which are not appeared a t optical lithogra
Publikováno v:
Journal of Soil and Groundwater Environment. 18:73-81
Various remediation methods have been applied to clean soils contaminated with pollutants. They remove contaminants from the soils by utilizing physicochemical, biological, and thermal processes and can satisfy soil remediation standards within a lim
Autor:
Min-Su Kim, Hye-Keun Oh, Eytan Barouch, Michael Yeung, Guk-Jin Kim, Jin-Goo Park, In-Seon Kim
Publikováno v:
SPIE Proceedings.
For protecting mask from debris, EUV pellicle is considered as a most effective solution. EUV pellicle can avoid contamination on mask by covering mask. Usage of EUV pellicle can reduce mask damage caused by contamination but the pellicle involves tr