Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Guk-Cheon Kim"'
Autor:
Shigemi Mizukami, Yasuo Ando, Mikihiko Oogane, Nobuhito Inami, Hiroshi Naganuma, Yuki Kawada, Satoshi Iihama, Guk-Cheon Kim, Khan Mohammed Nazrul Islam, Kenzo Hatakeyama
Publikováno v:
Nano Letters. 15:623-628
Spin dynamics excited by spin-polarized current in magnetic tunnel junctions (MTJs) is potentially useful in nanoscale electrical oscillation sources and detection devices. A spin oscillator/detector should work at a high frequency, such as that of a
Autor:
Kazumasa Sunouchi, Kyoung-Hwan Park, Guk-Cheon Kim, Kwang-Myoung Rho, Haruichi Kanaya, Suock Chung, Akihito Yamamoto, K. Noma, J. Y. Yi, Kenji Tsuchida, Tatsuya Kishi, Toshihiko Nagase, Mun-Haeng Lee, Yun-Seok Chun, S. J. Hong, Sung-Woong Chung, Hisato Oyamatsu, Hyeongon Kim, Jeongsoo Park, Masahisa Yoshikawa
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance co
Autor:
Yasuo Ando, Mikihiko Oogane, Toyohiko J. Konno, T. Miyazaki, Hiroshi Naganuma, Kazuhisa Sato, T. Hiratsuka, Nobuhito Inami, Guk-Cheon Kim
Publikováno v:
Journal of the Magnetics Society of Japan. 34:293-296
Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, and magnetotransport properties of
Autor:
Guk-Cheon Kim, Joon Pyo Kil, Seung-Mo Noh, Gi Yoon Bae, Dong Ik Suh, Wanjun Park, Won Joon Choi
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
Magnetic tunnel junctions (MTJs) using perpendicular magnetic anisotropy (PMA) have been studied for high density magnetoresistive random access memory (MRAM) with the expectations of scalability for driving current and reducing switching anomalies b
Autor:
Yasuo Ando, Terunobu Miyazaki, Hiroshi Naganuma, Mikihiko Oogane, Shigemi Mizukami, T. Hiratsuka, Nobuhito Inami, Satoshi Iihama, Guk-Cheon Kim
Publikováno v:
Japanese Journal of Applied Physics. 52:073002
Fast magnetization precession was observed in L10-FePt thin films with different L10 order parameter values by all optical pump–probe technique. Precession frequency was varied widely for the films with different order parameter, which is due to la
Autor:
Mikihiko Oogane, Guk-Cheon Kim, Yuya Sakuraba, Tetsuya Nakamura, Hiroshi Naganuma, T. Hiratsuka, Nobuhito Inami, Koki Takanashi, K. Kodama, Yasuo Ando, Tomohiro Kubota
Publikováno v:
Journal of Applied Physics. 107:09C714
Magnetic tunnel junctions (MTJs) of perpendicularly magnetized L10-CoPt/Co2MnSi/MgO/FePt structure were fabricated. In-plane x-ray diffraction measurements and element specific evaluation of magnetic properties using soft x-ray magnetic circular dich
Publikováno v:
Journal of Physics: Conference Series. 200:052011
Investigations of the structural and magnetic properties of thin Co50-xNixPt50 (x = 0, 10, 15, 37.5) films and fabrication of magnetic tunnel junctions (MTJs) using Co50Pt50 and Co35Ni15Pt50 electrodes were performed. X-ray diffraction analyses revea
Publikováno v:
Journal of Physics: Conference Series. 200:052008
Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, magnetotransport properties of the
Publikováno v:
Applied Physics Letters. 92(17):172502-172502-3
Magnetic tunnel junctions (MTJs) using L10-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt∕MgO∕CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffrac