Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Guilong Tao"'
Autor:
Tianchun Ye, Dapeng Chen, Deven Raj, Wei Zou, Huilong Zhu, Wang Yao, Liang Qingqing, Chao Zhao, Siamak Salimian, Jinbiao Liu, Jinjuan Xiang, Shan Tang, Guilong Tao, Junfeng Li, Xiaolei Wang, Gaobo Xu, Qiuxia Xu, Helen L. Maynard
Publikováno v:
IEEE Transactions on Electron Devices. 65:2400-2405
This paper proposed, for the first time, that the band-edge effective work functions (EWFs) are achieved by employing PH3 plasma doping (PLAD) TiN metal gate for nMOS device application under replacement metal gate and high dielectric constant (k) di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e648486be89a3320bfed01f630c142
https://doi.org/10.1109/ted.2018.2823337
https://doi.org/10.1109/ted.2018.2823337
Autor:
Huaxiang Yin, Qingzhu Zhang, Gaobo Xu, Jinshun Bi, Zhihao Li, Guilong Tao, Wenwu Wang, Jianhui Bu, Chao Zhao, Zhenhua Wu, Jinbiao Liu, Qiuxia Xu, Guoliang Tian, Huilong Zhu, Yongliang Li, Junfeng Li
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
In this paper, a p-type tunnel field-effect transistor with source-pocket junction (SPTFET) has been presented. The source-pocket junction was formed at the interface between source and channel region using BF 2 high-angle implantation, which is help
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18aeb3a812cd61b8f15a56204c1bb327
https://doi.org/10.1109/s3s46989.2019.9320653
https://doi.org/10.1109/s3s46989.2019.9320653
Autor:
Gaobo Xu, Huajie Zhou, Jianhui Bo, Guilong Tao, Yongliang Li, Junjie Li, Wenwu Wang, Huaxiang Yin, Wenjuan Xiong, Zhenhua Wu, Jinshun Bi, Haiping Shang, Jinbiao Liu, Junfeng Li, Chao Zhao, Qiuxia Xu, Huilong Zhu
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
In this paper, a p-type source-pocket tunnel field-effect (SPTFET) has been fabricated. The main feature of the device is that the p-type pocket was formed at the interface between source and channel region using BF 2 high-angle implantation. The sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6496faaf3d172c62448ccb5f875befde
https://doi.org/10.1109/cstic.2019.8755627
https://doi.org/10.1109/cstic.2019.8755627