Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Guilloy, K."'
Autor:
Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Milord, L., Thai, Q. M., Bertrand, M., Guilloy, K., Rouchon, D., Rothman, J., Zabel, T., Pilon, F. Armand, Sigg, H., Chelnokov, A., Hartmann, J. M., Calvo, V.
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um
Externí odkaz:
http://arxiv.org/abs/1704.06436
Autor:
Gassenq, A., Milord, L., Aubin, J., Pauc, N., Guilloy, K., Rothman, J., Rouchon, D., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measu
Externí odkaz:
http://arxiv.org/abs/1701.03788
Autor:
Guilloy, K., Pauc, N., Gassenq, A., Niquet, Y. M., Escalante, J. M., Duchemin, I., Tardif, S., Dias, G. Osvaldo, Rouchon, D., Widiez, J., Hartmann, J. M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. Howe
Externí odkaz:
http://arxiv.org/abs/1606.01668
Autor:
Gassenq, A., Tardif, S., Guilloy, K., Dias, G. Osvaldo, Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J-M., Widiez, J., Escalante, J., Niquet, Y-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.
Publikováno v:
Appl. Phys. Lett. 108, 241902 (2016)
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical li
Externí odkaz:
http://arxiv.org/abs/1604.04391
Autor:
Geiger, R., Zabel, T., Marin, E., Gassenq, A., Hartmann, J. -M., Widiez, J., Escalante, J., Guilloy, K., Pauc, N., Rouchon, D., Diaz, G. Osvaldo, Tardif, S., Rieutord, F., Duchemin, I., Niquet, Y. -M., Reboud, V., Calvo, V., Chelnokov, A., Faist, J., Sigg, H.
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain.
Externí odkaz:
http://arxiv.org/abs/1603.03454
Autor:
Reboud, V. *, Gassenq, A., Hartmann, J.M., Widiez, J., Virot, L., Aubin, J., Guilloy, K., Tardif, S., Fédéli, J.M., Pauc, N., Chelnokov, A., Calvo, V.
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials June 2017 63(2):1-24
Autor:
Gassenq, A., Guilloy, K., Pauc, N., Hartmann, J.-M., Osvaldo Dias, G., Rouchon, D., Tardif, S., Escalante, J., Duchemin, I., Niquet, Y.-M., Chelnokov, A., Reboud, V., Calvo, Vincent
Publikováno v:
In Thin Solid Films 31 August 2016 613:64-67
Publikováno v:
In Thin Solid Films 1 March 2016 602:13-19
Autor:
Gassenq, A., Tardif, S., Guilloy, K., Duchemin, I., Pauc, N., Hartmann, J. M., Rouchon, D., Widiez, J., Niquet, Y. M., Milord, L., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 5, p1-8, 8p, 1 Diagram, 2 Charts, 5 Graphs
Autor:
Geiger, R., Zabel, T., Marin, E., Gassenq, A., Hartmann, J. -M., Widiez, J., Escalante, J., Guilloy, K., Pauc, N., Rouchon, D., Diaz, G. Osvaldo, Tardif, S., Rieutord, F., Duchemin, I., Niquet, Y. -M., Reboud, V., Calvo, V., Chelnokov, A., Faist, J., Sigg, H.
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60a403b2682dc1b206a71e213f860ed1