Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Guillermo Vinuesa Sanz"'
Autor:
María Helena Castán Lanaspa, Eduardo Perez, Benjamín Sahelices Fernández, Guillermo Vinuesa Sanz, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger, Oscar G. Ossorio, Héctor García, Salvador Dueñas Carazo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
Autor:
Aarne Kasikov, Taivo Jõgiaas, Aivar Tarre, Salvador Dueñas Carazo, Jekaterina Kozlova, T. Käämbre, María Helena Castán Lanaspa, Kaupo Kukli, Helle-Mai Piirsoo, Guillermo Vinuesa Sanz, Tauno Kahro, Peeter Ritslaid, Aile Tamm
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Producción Científica
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregr
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::261de93b35baa23df4dbeb075fff4e8c
http://uvadoc.uva.es/handle/10324/46600
http://uvadoc.uva.es/handle/10324/46600