Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Guillermo Vinuesa"'
Autor:
Kristjan Kalam, Markus Otsus, Jekaterina Kozlova, Aivar Tarre, Aarne Kasikov, Raul Rammula, Joosep Link, Raivo Stern, Guillermo Vinuesa, José Miguel Lendínez, Salvador Dueñas, Helena Castán, Aile Tamm, Kaupo Kukli
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2593 (2022)
HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expecte
Externí odkaz:
https://doaj.org/article/2271c693f7d7404ead496a8338d38daa
Publikováno v:
PLoS ONE, Vol 16, Iss 9, p e0257047 (2021)
Non-volatile memory technology is now available in commodity hardware. This technology can be used as a backup memory for an external dram cache memory without needing to modify the software. However, the higher read and write latencies of non-volati
Externí odkaz:
https://doaj.org/article/b88b59bd771a421591ff0e913e85798d
Autor:
Oscar G. Ossorio, Helena Castán, Guillermo Vinuesa, Pelayo Marín, Benjamin Sahelices, Salvador Dueñas, Héctor García
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
This work deals with the thermoelectric characterization of commercial lead zirconate titanate (PZT) based piezoelectric diaphragms. An in-depth analysis of the piezo- and ferroelectric behavior of the samples was carried
This work deals with the thermoelectric characterization of commercial lead zirconate titanate (PZT) based piezoelectric diaphragms. An in-depth analysis of the piezo- and ferroelectric behavior of the samples was carried
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d5ad798ff2413a403866a5e588fadc3
https://doi.org/10.1149/10202.0045ecst
https://doi.org/10.1149/10202.0045ecst
Autor:
María Helena Castán Lanaspa, Eduardo Perez, Benjamín Sahelices Fernández, Guillermo Vinuesa Sanz, Mamathamba Kalishettyhalli Mahadevaiah, Christian Wenger, Oscar G. Ossorio, Héctor García, Salvador Dueñas Carazo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4efa8ff609473b80a5888c99df136af0
https://doi.org/10.1149/10202.0029ecst
https://doi.org/10.1149/10202.0029ecst
Autor:
Kaupo Kukli, Lauri Aarik, Guillermo Vinuesa, Salvador Dueñas, Helena Castán, Héctor García, Aarne Kasikov, Peeter Ritslaid, Helle-Mai Piirsoo, Jaan Aarik
Publikováno v:
Materials; Volume 15; Issue 3; Pages: 877
Materials, Vol 15, Iss 877, p 877 (2022)
Materials, Vol 15, Iss 877, p 877 (2022)
Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98a7d6a28e3c9f716ab1e925a68620aa
Autor:
Guillermo Vinuesa
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
En los últimos años, la búsqueda de sustitutos para la actual tecnología CMOS en la que se basan la mayoría de memorias de estado sólido, como las flash, se ha incrementado. Ello ha causado que fenómenos como la conmutación resistiva (resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d56118e58d6b59f6b057b1ddfb9ac948
https://uvadoc.uva.es/handle/10324/52426
https://uvadoc.uva.es/handle/10324/52426
Autor:
Guillermo Vinuesa, Francesca Campabadal, Benjamin Sahelices, C. Santa Cruz Gonzalez, Salvador Dueñas, Oscar G. Ossorio, Helena Castán, Mireia Bargallo Gonzalez, Héctor García, J. Jimenez
Publikováno v:
2021 13th Spanish Conference on Electron Devices (CDE).
A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534b16229b73a64784455f40fce6839b
https://doi.org/10.1109/cde52135.2021.9455723
https://doi.org/10.1109/cde52135.2021.9455723
Autor:
Aarne Kasikov, Taivo Jõgiaas, Aivar Tarre, Salvador Dueñas Carazo, Jekaterina Kozlova, T. Käämbre, María Helena Castán Lanaspa, Kaupo Kukli, Helle-Mai Piirsoo, Guillermo Vinuesa Sanz, Tauno Kahro, Peeter Ritslaid, Aile Tamm
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Producción Científica
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregr
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::261de93b35baa23df4dbeb075fff4e8c
http://uvadoc.uva.es/handle/10324/46600
http://uvadoc.uva.es/handle/10324/46600
Autor:
Salvador Dueñas, Mikko Ritala, Guillermo Vinuesa, M. Leskelaˇ, Helena Castán, Marianna Kemell, Oscar G. Ossorio, Kaupo Kukli, Benjamin Sahelices, Héctor García
Producción Científica
Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the
Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf2022835c5853051f7b86b1ec4507b8
https://doi.org/10.1016/j.sse.2021.108114
https://doi.org/10.1016/j.sse.2021.108114
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Autor:
Francesca Campabadal, Salvador Dueñas, Oscar G. Ossorio, Mireia Bargallo Gonzalez, Jonathan Boo, Hector H. Garcia, Guillermo Vinuesa, Benjamin Sahelices, Helena Castán
Publikováno v:
Electronics, Vol 10, Iss 2816, p 2816 (2021)
Electronics
Volume 10
Issue 22
Electronics
Volume 10
Issue 22
Producción Científica
In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to g
In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887068a09b7c0677cba12f93783444a5
https://doi.org/10.3390/electronics10222816
https://doi.org/10.3390/electronics10222816