Spin Orbit Torque memory for non-volatile microprocessor caches

Autor: Fabian Oboril, Rajendra Bishnoi, Mojtaba Ebrahimi, Tahoori, Mehdi B., Gregory DI PENDINA, Kotb Jabeur, Guillaune Prenat

Publikováno v: W07 International Workshop on Emerging Memory Solutions-DATE 2016
W07 International Workshop on Emerging Memory Solutions-DATE 2016, Mar 2016, Dresden, Germany
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Magnetic spin-based memory technologies are a promising solution to overcome the incoming limits of microelectronics. Nevertheless, the long write latency and high write energy of these memory technologies compared to SRAM make it difficult to use th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2df9b71b3cad0c70cdb02d1e8b25f590
https://hal.archives-ouvertes.fr/hal-01864483

Cellule mémoire volatile/non-volatile

Autor: Gregory DI PENDINA, Yoann Guillemenet, Guillaune Prenat, Kholdoun Tork, Lionel Torres

Publikováno v: France, N° de brevet: FR 2970589 (B1) WO/2012/098181 (A1). 2013, pp.N/A
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Extension : 26/07/12; The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::865cc5138d45a13a32be978820e1eb1d
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00861516

SPICE modelling of magnetic tunnel junctions written by spin-transfer torque

Autor: C. Baraduc, N. de Mestier, M. El Baraji, Guillaune Prenat, Virgile Javerliac, Bernard Dieny, Wei Guo

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (21), pp.215001. ⟨10.1088/0022-3727/43/21/215001⟩
Journal of Physics D: Applied Physics, 2010, 43 (21), pp.215001. ⟨10.1088/0022-3727/43/21/215001⟩

International audience; Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron, but also its spin. The resulting spintronic devices, combining the front-end CMOS technology of electronic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5305d14637fd4baad92a2cb285f79977
https://doi.org/10.1088/0022-3727/43/21/215001