Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Guillaume Sempere"'
Autor:
Laurent Roux, Philippe Godignon, Moriz Jelinek, Marcin Zielinski, Yohann Spiegel, Frank Torregrosa, Gael Borvon, Werner Schustereder, Thomas Wuebben, Guillaume Sempere, Frederic Morancho
Publikováno v:
22nd International Conference on Ion Implantation Technology (IIT)
22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p., ⟨10.1109/IIT.2018.8807978⟩
22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p., ⟨10.1109/IIT.2018.8807978⟩
International audience; Thanks to its high throughput and low cost of ownership Plasma Immersion Ion Implantation (or Plasma Doping) has been widely used for Memory device fabrication. Its ability to implant very high doses in shallow layers, makes i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d0e051c511493dd9e5079716cf2e415
https://hal.laas.fr/hal-01955688/document
https://hal.laas.fr/hal-01955688/document
Autor:
Laurent Roux, Adeline Lanterne, Guillaume Sempere, Thibaut Desrues, Frederic Milesi, Marianne Coig, Sébastien Dubois, Frank Torregrosa
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Since several years, the use of Beamline ion implantation has been proven to allow optimization of doping profiles needed for the fabrication of crystalline silicon (c-Si) solar cells while simplifying the process flow. Nevertheless the cost and comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca8ef381576eefde15b3976a3690745
https://doi.org/10.1109/iit.2018.8807976
https://doi.org/10.1109/iit.2018.8807976
Autor:
Frank Torregrosa, Hasnaa Etienne, Guillaume Sempere, Gilles Mathieu, Laurent Roux, Vanessa Vervisch, Philippe Delaporte, Thierry Sarnet, Aron Pap, Krisztián Kis-Szabo, Tibor Pavelka, Catherine Grosjean, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
In order to achieve the requirements for P+/N junctions for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f01671eef934a8c7b6bf103b74c1f82
https://doi.org/10.1063/1.3033665
https://doi.org/10.1063/1.3033665
Autor:
Frank Torregrosa, Hasnaa Etienne, Guillaume Sempere, Gilles Mathieu, Laurent Roux, Frédéric Milesi, Frédéric Gonzatti, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Thanks to the European Projects SEA‐NET and PULLNANO, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra‐Shallow Junctions for 45 and 32 nm CMOS on 200 and 300 mm wafers. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e0552b1516f2b744d4808d6930c507
https://doi.org/10.1063/1.3033669
https://doi.org/10.1063/1.3033669
Autor:
Frank Torregrosa, Hasnaa Etienne, Guillaume Sempere, Gilles Mathieu, Laurent Roux, Frederic Milesi, Frederic Gonzatti, Xavier Pages, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Thanks to the European Project SEA‐NET, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra‐Shallow Junction for 45 & 32 nm CMOS on 200 and 300 mm wafers. In this study, we present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f6472e65bff3a62476356d0ad39763d
https://doi.org/10.1063/1.3033666
https://doi.org/10.1063/1.3033666