Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Guillaume Noircler"'
Autor:
Loïc Crouzier, Alexandra Delvallée, Sébastien Ducourtieux, Laurent Devoille, Guillaume Noircler, Christian Ulysse, Olivier Taché, Elodie Barruet, Christophe Tromas, Nicolas Feltin
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1523-1536 (2019)
At this time, there is no instrument capable of measuring a nano-object along the three spatial dimensions with a controlled uncertainty. The combination of several instruments is thus necessary to metrologically characterize the dimensional properti
Externí odkaz:
https://doaj.org/article/a193738452ed43e18937b2f1c8c2af3a
Autor:
Etienne Drahi, Guillaume Noircler, Fabien Lebreton, Bénédicte Warot-Fonrose, Patricia de Coux
Publikováno v:
Micron
Micron, Elsevier, 2021, 145, pp.103032. ⟨10.1016/j.micron.2021.103032⟩
Micron, 2021, 145, pp.103032. ⟨10.1016/j.micron.2021.103032⟩
Micron, Elsevier, 2021, 145, pp.103032. ⟨10.1016/j.micron.2021.103032⟩
Micron, 2021, 145, pp.103032. ⟨10.1016/j.micron.2021.103032⟩
In this article, STEM-EELS methodology is described to investigate the composition of sensitive crystalline Silicon/amorphous aluminum oxide (c-Si/a-AlOx) interface of an a AlOx/amorphous hydrogenated silicon nitride (a-AlOx/a-SiNx:H) passivation sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c7fb5496a6f7a3fbd767980729af2b6
https://hal.archives-ouvertes.fr/hal-03346456
https://hal.archives-ouvertes.fr/hal-03346456
Autor:
Elodie Barruet, Christian Ulysse, Guillaume Noircler, Alexandra Delvallée, Christophe Tromas, Nicolas Feltin, Loïc Crouzier, Sebastien Ducourtieux, Laurent Devoille, Olivier Taché
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2019, 10, pp.1523-1536. ⟨10.3762/bjnano.10.150⟩
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1523-1536 (2019)
Beilstein Journal of Nanotechnology, 2019, 10, pp.1523-1536. ⟨10.3762/bjnano.10.150⟩
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2019, 10, pp.1523-1536. ⟨10.3762/bjnano.10.150⟩
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1523-1536 (2019)
Beilstein Journal of Nanotechnology, 2019, 10, pp.1523-1536. ⟨10.3762/bjnano.10.150⟩
International audience; At this time, there is no instrument capable of measuring a nano-object along the three spatial dimensions with a controlled uncertainty. The combination of several instruments is thus necessary to metrologically characterize
Autor:
Guillaume, Noircler, Fabien, Lebreton, Etienne, Drahi, Patricia, de Coux, Bénédicte, Warot-Fonrose
Publikováno v:
Micron (Oxford, England : 1993). 145
In this article, STEM-EELS methodology is described to investigate the composition of sensitive crystalline Silicon/amorphous aluminum oxide (c-Si/a-AlOx) interface of an a AlOx/amorphous hydrogenated silicon nitride (a-AlOx/a-SiNx:H) passivation sta
Autor:
Etienne Drahi, Bénédicte Warot-Fonrose, Pere Roca i Cabarrocas, Patricia de Coux, Marta Chrostowski, Melvyn Larranaga, Guillaume Noircler
Publikováno v:
CrystEngComm
CrystEngComm, 2020, 22 (33), pp.5464-5472. ⟨10.1039/D0CE00817F⟩
CrystEngComm, Royal Society of Chemistry, 2020, 22 (33), pp.5464-5472. ⟨10.1039/D0CE00817F⟩
CrystEngComm, 2020, 22 (33), pp.5464-5472. ⟨10.1039/D0CE00817F⟩
CrystEngComm, Royal Society of Chemistry, 2020, 22 (33), pp.5464-5472. ⟨10.1039/D0CE00817F⟩
Transmission electron microscopy (TEM) techniques can provide a complementary understanding of the physico-chemical mechanisms of the growth and the annealing behavior of boron-doped hydrogenated silicon epitaxial films grown at low temperatures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81866641ac5035c69473b0acdd673658
https://hal.science/hal-03030275
https://hal.science/hal-03030275