Zobrazeno 1 - 5 of 5 pro vyhledávání: '"Guillaume Le Dain"'
1
Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6/Ar plasmas
Autor: Emeline Baudet, Christophe Cardinaud, Guillaume Le Dain, Virginie Nazabal, Thibaut Meyer, Ahmed Rhallabi, Aurélie Girard, Petr Němec
Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
Applied Surface Science, 2021, 549, pp.149192. ⟨10.1016/j.apsusc.2021.149192⟩
International audience; A functional waveguide for photonic applications must fulfil some specific requirements in terms of dimension, shape, etch rate and roughness. In this study, Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473dd7e1b85cd4be5243340f0cd54604
https://hal.archives-ouvertes.fr/hal-03194243/file/ASS_Meyer_2021-1.pdf
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2
Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma
Autor: Ahmed Rhallabi, Stéphane Guilet, Feriel Laourine, Aurélie Girard, Guillaume Le Dain, Thierry Czerwiec, Gérard Henrion, Cédric Noël, Christophe Cardinaud, G. Marcos
Publikováno v: Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (9), pp.095022. ⟨10.1088/1361-6595/ac1714⟩
Dry etching process of iron, chromium and iron-chromium alloys under a chlorine-based plasma is studied. The objective is to create new surface functionalities. Our approach is twofold: on the one hand, an experimental study in an ICP (Inductively Co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::777268473a385e1819441298e30cccd3
https://doi.org/10.1088/1361-6595/ac1714
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4
Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties
Autor: Aurélie Girard, Christophe Cardinaud, Mohamed Boufnichel, F. Roqueta, Ahmed Rhallabi, Guillaume Le Dain, Marie-Claude Fernandez
Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩
The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the effect of the oxygen addition to C4F8 plasma during the deposition pulse. This is the compleme
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe1ff2b57296a78bbe131c2a500a6eb
https://hal.archives-ouvertes.fr/hal-01848351
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5
Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process
Autor: Marie Claude Fernandez, Ahmed Rhallabi, Guillaume Le Dain, Mohamed Boufnichel, F. Roqueta
Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (3), ⟨10.1116/1.4982687⟩
This study is dedicated to the development of a multiscale approach for the simulation of silicon etching using the Bosch process. The etching simulator is composed of three modules: plasma kinetic model, sheath model, and surface model. The top down
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a25b8ae64894589b9b35373bbf116a22
https://doi.org/10.1116/1.4982687
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