Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Guillaume Celi"'
Publikováno v:
Microelectronics Reliability. 51:1640-1645
Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates even for very deep submicron technologies at low power supply voltage. Anyway, the measured timing information differs from waveform measurement where logical states ar
Publikováno v:
Microelectronics Reliability. 51:1646-1651
Static and dynamic techniques for defect location are well established in the failure analysis flow of a failing integrated circuit. When a circuit shows an overconsumption on power supply, the useful static techniques are laser stimulation (OBIRCH,
Autor:
Guillaume Celi, Sylvain Dudit, Thierry Parrassin, Emmanuel Bechet, Antoine Reverdy, Philippe Perdu, Michel Vallet, Dean Lewis
Publikováno v:
Microelectronics Reliability. 50:1499-1505
For very deep submicron technologies, 45 nm and less, bridge defects are getting more and more complex and critical. In order to find the exact root cause, accurate defect localization, precise understanding on the nature of the defect and its impact
Laser Voltage Imaging and Its Derivatives—Efficient Techniques to Address Defect on 28 nm Technology
Autor:
Sylvain Dudit, Guillaume Celi, Michel Vallet, Dean Lewis, Philippe Perdu, Thierry Parrassin, Antoine Reverdy
Publikováno v:
International Symposium for Testing and Failure Analysis.
The Laser Voltage Imaging (LVI) technique, introduced in 2007 [1][2], has been demonstrated as a successful defect localization technique to address problems on advanced technologies. In this paper, several 28nm case studies are described on which th
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013)
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013)
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013), Jul 2013, France. pp.123-130
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013), Jul 2013, France. pp.123-130, 2013
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013)
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013), Jul 2013, France. pp.123-130
20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2013), Jul 2013, France. pp.123-130, 2013
International audience; Electro Optical Techniques (EOFM: Electro Optical Frequency Mapping and EOP: Electro Optical Probing) and Dynamic Light Emission Techniques (TRE: Time Resolved Emission and TRI: Time Resolved Imaging) are dynamic optical probi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1d0c10917c68928208f39e5ac0f341e
https://hal.archives-ouvertes.fr/hal-00860858
https://hal.archives-ouvertes.fr/hal-00860858
Publikováno v:
International Symposium for Testing and Failure Analysis.
The bridge defect is one of the most difficult defects to locate. When classical static and dynamic optical techniques reach their limits, applying a dynamic signal on the power supplies for stimulating the defect allows obtaining useful additional i
Autor:
Antoine Reverdy, Sylvain Dudit, Michel Vallet, Philippe Perdu, Dean Lewis, Guillaume Celi, Thierry Parrassin
Publikováno v:
International Symposium for Testing and Failure Analysis.
The Laser Voltage Imaging (LVI) technique [1], introduced in 2009, appears as a very promising approach for Failure Analysis application which allows mapping frequencies through the backside of integrated circuits. In this paper, we propose a new ran
Autor:
Thierry Parrassin, Michel Vallet, Philippe Perdu, Guillaume Celi, Sylvain Dudit, Antoine Reverdy, Dean Lewis
Publikováno v:
International Symposium for Testing and Failure Analysis.
For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated ci
LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis
Autor:
Thierry Parrassin, Philippe Perdu, Antoine Reverdy, Dean Lewis, Michel Vallet, Sylvain Dudit, Guillaume Celi
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2011, 51, pp.1662-1667. ⟨10.1016/j.microrel.2011.07.030⟩
Microelectronics Reliability, Elsevier, 2011, 51, pp.1662-1667. ⟨10.1016/j.microrel.2011.07.030⟩
International audience; For very deep submicron technologies, 45 nm and below, Photoemission microscopy suffers from decreasing signal strength due to lower voltages. Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ae609402dc4b871c553ccb361490e3c
https://hal.archives-ouvertes.fr/hal-00669760
https://hal.archives-ouvertes.fr/hal-00669760
Publikováno v:
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates. CMOS Technology trends has challenged this technique. Power Supply decrease has induced a strong reduction of photon emission related to MOS saturation mode and shifte