Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Guillaume Bouche"'
Flood economic damage results from complex phenomena involving biophysical processes that determine the damage of the components but also the decisions taken for reconstruction. The method most frequently used to estimate damage is based on the assum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03556e1540fbdf6c4d54ce8e15d698e
https://doi.org/10.5194/egusphere-egu22-3677
https://doi.org/10.5194/egusphere-egu22-3677
Autor:
Youngtag Woo, Jagar Singh, Geert Van der Plas, B. Senapati, Shan Gao, Jason Eugene Stephens, Adam Beece, Lu Yuan, Michelle Sureddin, Mahbub Rashed, Ali Wehbi, Srikant Samavedam, Van Ton-That, Irene Lin, Jongwook Kye, Donald Yu, Guillaume Bouche, Kanagala Vijay, Rod Augur, Peter Hang, Ramakanth Alapati, Dragomir Milojevic
Publikováno v:
International Symposium on Microelectronics. 2015:000035-000040
The traditional drivers for the adoption of 3D integration technology are footprint, power, performance, and/or bandwidth gains at the expense of increased cost due to additional wafer processing, dies stacking and 3D test. However, for larger dies i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54567f4229b1e92787cabdee830b1b8
https://doi.org/10.4071/isom-2015-tp21
https://doi.org/10.4071/isom-2015-tp21
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-10 (2022)
The chaotic behavior due to the non-linearity present in a time-delayed feedback system has potential applications for secure optical communication and encryption. Here, a laser diode with phase-conjugate feedback is reported with state-of-the-art br
Externí odkaz:
https://doaj.org/article/d5190848ca624de5bbc18b86fdd86145
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
Design technology co-optimization (DTCO) is the term used to describe the process of deriving a competitive technology definition out of a number of increasingly complex trade-offs. DTCO is not a specific approach or methodology, but rather a commitm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8740f1b1d319e12f636808b417c620e9
https://doi.org/10.1109/vlsit.2016.7573398
https://doi.org/10.1109/vlsit.2016.7573398
Publikováno v:
IEEE Transactions on Magnetics. 41:3544-3549
Size reduction for spiral inductors is investigated. We reveal bidirectional ferromagnetic inductors with an /spl sim/30% to 135% increase in L over the air-core value. This is advantageously realized by using single deposition. The realization uses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce23eff4d24c51434f33c94b26866083
https://doi.org/10.1109/tmag.2005.854727
https://doi.org/10.1109/tmag.2005.854727
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:2318-2324
Addressing reconfiguration of radio frequency (RF) systems might require high performance integrated RF switching capabilities. In this regard, a particular design experience of an integrated circuit (IC) monolithically integrated microelectromechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdad376b3ba27eee384fb3bbbdad4278
https://doi.org/10.1109/jssc.2003.819170
https://doi.org/10.1109/jssc.2003.819170
Autor:
Amol Joshi, Ira Lim, Zhendong Hong, Albert Lee, Abhijit Pethe, Salil Mujumdar, Mark Raymond, Shao-Ming Koh, Hiroaki Nimii, Sean Barstow, Guillaume Bouche, Nobi Fuchigami, Ashish Bodke, Paul R. Besser
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiO x insulator. For Ti-TiO x -n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiO x into Ti duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dd455d111ca2c3089a5ec135fb4119
https://doi.org/10.1109/snw.2014.7348552
https://doi.org/10.1109/snw.2014.7348552
Publikováno v:
IEEE Transactions on Magnetics. 41:3319-3321
In this work, recent improvements on high magnetization FeHfN films for RF-use and possibility of very high resistivity with introducing oxygen during deposition are investigated. The films are deposited at room temperature by reactive RF diode sputt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4faecbe1ad6dc6b22701ee6e4d45bc5b
https://doi.org/10.1109/tmag.2005.854906
https://doi.org/10.1109/tmag.2005.854906
Autor:
J.F. Carpentier, J.B. David, Christian Enz, P. Conti, Patrice Garcia, M.-A. Dubois, Andreia Cathelin, Cyrille Tilhac, C. Arnaud, G. Caruyer, Pierre Vincent, Pascal Ancey, Didier Belot, Pascal Persechini, C. Billard, G. Parat, Guillaume Bouche
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
The feasibility of a fully integrated RF front-end using an above-IC BAW integration technique is demonstrated for WCDMA applications. The circuit has a voltage gain of 31.3dB, a noise figure of 5.3dB, an in-band IIP3 of -8dBm and IIP2 of 38dBm, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9de489601cac0c574727a041b9264f
https://doi.org/10.1109/isscc.2005.1494035
https://doi.org/10.1109/isscc.2005.1494035
Autor:
S. Boret, C. Billard, P. Berruyer, Guillaume Bouche, D. Saias, P.L. Charvet, N. Sillon, Pascal Ancey, Philippe Robert, C. Maeder-Pachurka
Publikováno v:
TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).
We have demonstrated the feasibility of a fully integrated RF microswitch. It is based on a combination of thermal actuation and electrostatic latching hold. This method enables to combine the advantages of both actuation modes : the low voltage powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c27230366b14ca5079962c093cdd39d
https://doi.org/10.1109/sensor.2003.1217115
https://doi.org/10.1109/sensor.2003.1217115