Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Guillaume Audoit"'
Autor:
Gauthier Lefevre, Tristan Dewolf, Nicolas Guillaume, Serge Blonkowski, Christelle Charpin-Nicolle, Eric Jalaguier, Etienne Nowak, Nicolas Bernier, Tom Blomberg, Marko Tuominen, Hessel Sprey, Guillaume Audoit, Sylvie Schamm-Chardon
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2021, 130 (24), pp.244501. ⟨10.1063/5.0072343⟩
Journal of Applied Physics, 2021, 130 (24), pp.244501. ⟨10.1063/5.0072343⟩
International audience; Metal oxide-based resistive random access memory devices are highly attractive candidates for next-generation nonvolatile memories, butthe resistive switching phenomena remain poorly understood. This article focuses on the mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fc9c75e2904caa58ba963d3a81c7c11
https://doi.org/10.1063/5.0072343
https://doi.org/10.1063/5.0072343
Autor:
Gilles Lasfargues, Jean-Pierre Rostaing, Bertrand Dupont, Jean-Alain Nicolas, Guillaume Audoit, Sylvette Bisotto, Geoffroy Bordot, Quentin Abadie, Luc André, Pierre Bleuet, Johan Rothman
Publikováno v:
Free-Space Laser Communication and Atmospheric Propagation XXX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da0e604e7950104c40caa6a7cfce7be
https://doi.org/10.1117/12.2286474
https://doi.org/10.1117/12.2286474
Mechanics of cracking failure in a silver layer deposited by inkjet printing on a flexible substrate
Autor:
Guillaume Parry, Vincent Mandrillon, Marie Le Druillennec, Guillaume Audoit, Christophe Poulain, Rafael Estevez
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC).
This work intends to investigate strain fields around cracks in thin metallic film deposited on flexible substrate through an experimental approach. The studied sample consists of a pre-cracked silver nanoparticles inkjet printed layer with a thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796acaad66545f5fd8631245ee3a7ba0
https://doi.org/10.1109/estc.2016.7764476
https://doi.org/10.1109/estc.2016.7764476
Autor:
Tristan Dewolf, Vincent Delaye, Nicolas Bernier, David Cooper, Nicolas Chevalier, Helen Grampeix, Christelle Charpin, Eric Jalaguier, Martin Kogelschatz, Sylvie Schamm-Chardon, Guillaume Audoit
Publikováno v:
16th European Microscopy Congress
16th European Microscopy Congress, 2016, LYON, France
16th European Microscopy Congress, 2016, LYON, France
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ec7ade814a62abe33954ecb2aad01e0
https://hal.univ-grenoble-alpes.fr/hal-01882043
https://hal.univ-grenoble-alpes.fr/hal-01882043
Autor:
Shay Reboh, Rémi Coquand, Nicolas Loubet, Nicolas Bernier, Robin Chao, Guillaume Audoit, Jean-Luc Rouviere, Sylvain Barraud, Emmanuel Augendre, Juntao Li, Raja Muthinti, John Gaudiello, Narciso Gambacorti, Tenko Yamashita, Olivier Faynot
Publikováno v:
ECS Meeting Abstracts. :1370-1370
In recent years there was a major structural transition from planar 2D to 3D FinFETs in Si-technology of transistors providing improvement of electrical characteristics for advanced devices. A further evolution to stacked gate-all-around channels (SG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0112f069c856aec8d30c841470533c5a
https://doi.org/10.1149/ma2018-01/22/1370
https://doi.org/10.1149/ma2018-01/22/1370
Autor:
Sebastien Massenot, Laurent Leyssenne, Damienne Bajon, Sidina Wane, Philippe Descamps, Guillaume Audoit, Rosine Coq-Germanicus
Publikováno v:
2013 International Conference on Electromagnetics in Advanced Applications (ICEAA)
2013 International Conference on Electromagnetics in Advanced Applications (ICEAA), Sep 2013, Torino (Turin), France. pp.1032-1035, ⟨10.1109/ICEAA.2013.6632399⟩
2013 International Conference on Electromagnetics in Advanced Applications (ICEAA), Sep 2013, Torino (Turin), Italy. pp.1032-1035, ⟨10.1109/ICEAA.2013.6632399⟩
2013 International Conference on Electromagnetics in Advanced Applications (ICEAA), Sep 2013, Torino (Turin), France. pp.1032-1035, ⟨10.1109/ICEAA.2013.6632399⟩
2013 International Conference on Electromagnetics in Advanced Applications (ICEAA), Sep 2013, Torino (Turin), Italy. pp.1032-1035, ⟨10.1109/ICEAA.2013.6632399⟩
This paper proposes a complementary multi-physics material analysis approach based on broadband dielectric characterization and Atomic Force Microscopy. In the prospect of integrated dielectric sensor design, this approach was applied to polymers com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a45f856b6ead23206d30a6e462f4aa86
https://hal.archives-ouvertes.fr/hal-03515113
https://hal.archives-ouvertes.fr/hal-03515113
Autor:
Elodie Beche, Frank Fournel, Vincent Larrey, François Rieutord, Christophe Morales, Anne-Marie Charvet, Florence Madeira, Guillaume Audoit, Jean-Marc Fabbri
Publikováno v:
ECS Meeting Abstracts. :1722-1722
Direct bonding is used to join two mirror-polished wafers without any additional material. This technique demonstrates to be more and more attractive for microelectronics, MEMS, or optoelectronic applications as example. In many of them, Silicon-On-I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84346eec532af317bc0a8d43057e058c
https://doi.org/10.1149/ma2014-02/34/1722
https://doi.org/10.1149/ma2014-02/34/1722
Publikováno v:
Journal of Materials Chemistry; Apr2007, Vol. 17 Issue 16, p1608-1613, 6p
Autor:
Guillaume Audoit, Éimhín Ní Mhuircheartaigh, Stephen M. Lipson, Michael A. Morris, Werner J. Blau, Justin D. Holmes
Publikováno v:
Journal of Materials Chemistry; Nov2005, Vol. 15 Issue 45, p4809-4815, 7p
Autor:
Dewolf, Tristan
Publikováno v:
Electromagnétisme. Université Paul Sabatier-Toulouse III, 2018. Français. ⟨NNT : 2018TOU30223⟩
Digital technology is invading our day life and the amount of data is exploding. This implies to develop memories which perform better and better. This is a major issue in microelectronics. Among non-volatile memories, Oxide based resistive RAM are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b857b439fcafcee38b07c7cc041558f3
https://theses.hal.science/tel-02316165
https://theses.hal.science/tel-02316165