Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Guilin Zhao"'
Publikováno v:
International Journal of Mathematical, Engineering and Management Sciences, Vol 9, Iss 4, Pp 697-713 (2024)
Storage area networks (SANs) are a widely used and dependable solution for data storage. Nevertheless, the occurrence of cascading failures caused by overloading has emerged as a significant risk to the reliability of SANs, impeding the delivery of t
Externí odkaz:
https://doaj.org/article/037a948a609d4c21bf7bc1a38364ab7f
Publikováno v:
Frontiers in Public Health, Vol 10 (2022)
Recently, indoor thermal comfort has received more scholarly attention than ever due to the COVID-19 pandemic and global warming. However, most studies on indoor thermal comfort in China concentrated on urban buildings in the east and north. The indo
Externí odkaz:
https://doaj.org/article/021d6775cbdf4b719f3a72dd27c1338b
Autor:
Guilin Zhao
Publikováno v:
2022 8th International Symposium on System Security, Safety, and Reliability (ISSSR).
Autor:
Guilin Zhao, Liudong Xing
Publikováno v:
Reliability Engineering & System Safety. 236:109305
Publikováno v:
Engineering Applications of Artificial Intelligence. 122:106138
Publikováno v:
Quality and Reliability Engineering International. 37:2065-2084
Publikováno v:
Quality and Reliability Engineering International. 36:947-964
Publikováno v:
Mathematics for Reliability Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5c3174dce6650abc5a3a83eff1fba4
https://doi.org/10.1515/9783110725599-005
https://doi.org/10.1515/9783110725599-005
Publikováno v:
Stochastic Models in Reliability Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177976bedb8e09bbb8e413cdda067e23
https://doi.org/10.1201/9780429331527-20
https://doi.org/10.1201/9780429331527-20
Autor:
Chao Peng, Lei Zhifeng, Shi Qian, Zhang Zhangang, Yang Juan, He Yujuan, Yun-Fei En, Huang Yun, Yuan Liu, Guilin Zhao
Publikováno v:
IEEE Transactions on Nuclear Science. 65:2802-2807
Single-event upset sensitivity of 55- and 180-nm SRAM devices with error detection and correction (EDAC) exhibits obvious ion flux and scrubbing time dependence. On-orbit soft error rates (SERs) of EDAC SRAM devices are extrapolated from accelerator