Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Guilherme Matos Sipahi"'
Autor:
Guilherme Matos Sipahi
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.
Poços e super-redes delta-doping tipo são sistemas semicondutores de interesse considerável tanto para a pesquisa básica como para aplicações em dispositivos. Neste trabalho desenvolvemos um novo método para o cálculo de potenciais e estrutur
Autor:
Marcos H. L. de Medeiros, Guilherme Matos Sipahi, Luis G. G. V. Dias da Silva, Raphael L. R. C. Teixeira
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge
Autor:
Paulo E. Faria Junior, Gaofeng Xu, Kristian Stojšić, Igor Žutić, Nils C. Gerhardt, Markus Lindemann, Guilherme Matos Sipahi, Velimir Labinac, Martin R. Hofmann, Jeongsu Lee
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ea9d7106efdeeb73fc22c568d5c373
https://epub.uni-regensburg.de/44705/
https://epub.uni-regensburg.de/44705/
Autor:
Hélio T. Obata, Mônica A. Cotta, Fernando Iikawa, Guilherme Matos Sipahi, Caio E. de Oliveira, Fábio D. Bonani, O. D. D. Couto, Bruno César Gregório da Silva, Mauricio M. de Lima
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-1 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-1 (2020)
Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully
Autor:
Fernando Iikawa, Fábio D. Bonani, Mauricio M. de Lima, Hélio T. Obata, Guilherme Matos Sipahi, Caio E. de Oliveira, Bruno César Gregório da Silva, Mônica A. Cotta, O. D. D. Couto
Publikováno v:
Scientific Reports
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully
Autor:
Rafael Besse, Diego Guedes-Sobrinho, Juarez L. F. Da Silva, Naidel A. M. S. Caturello, Carlos M. O. Bastos, Matheus P. Lima, Guilherme Matos Sipahi
Publikováno v:
The Journal of Physical Chemistry C. 122:20483-20488
The control of the relative stability between trigonal prismatic and octahedral structures in transition-metal dichalcogenides (TMDs) is an important step toward technological applications of 2D TMDs materials, where the electronic properties have a
Autor:
Igor Žutić, Paulo E. Faria Junior, Jeongsu Lee, Gaofeng Xu, Nils C. Gerhardt, Guilherme Matos Sipahi, Christian Gothgen
Publikováno v:
Spintronics Handbook: Spin Transport and Magnetism, Second Edition ISBN: 9780429441189
This chapter describes various elements and operating regimes of spin-lasers. It provides a description of spin-unpolarized lasers that can be readily generalized to spin-lasers, which are subsequently analyzed in both their steady-state and dynamica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c942f4712fc023481f25af4cf0ddaa
https://doi.org/10.1201/9780429441189-16
https://doi.org/10.1201/9780429441189-16
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states of matter.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bdeb494554597bea72b33ac75447ede
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
In this work, we report an ab initio investigation based on density functional theory of the structural, energetic, and electronic properties of 2D layered chalcogenides compounds based in the combination of the transition-metals (Ti, Zr, Hf, V, Nb,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7333bc2d567fe9c008d3f81ec521523c
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ace8812d5f78aea5f652538bb53fb3e